Sanyo 2SC4623 Specifications
Ordering number:EN3644
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1777/2SC4623
Very High-Definition CRT Display
Video Output Applications
Features
· HighTf : fT=400MHz (typ).
· High breakdown voltage : V ≥250V(min).
CEO
·High current.
·Small reverse transfer capacitance and excellent high-frequnecy characteristic :
Cre=3.4pF (NPN), 4.2pF (PNP).
·Complementary pair with the 2SA1777/2SC4623.
·Adoption of FBET process.
( ) : 2SA1777
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2042B
[2SA1777/2SC4623]
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)250 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)250 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)3 |
V |
Collector Current |
IC |
|
(–)300 |
mA |
Colletor Current (Pulse) |
ICP |
|
(–)600 |
mA |
Collector Dissipation |
PC |
|
1.3 |
W |
|
|
Tc=25˚C |
10 |
W |
|
|
|
|
|
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)150V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)2V, IC=0 |
|
|
(–)1.0 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)10V, IC=(–)50mA |
40* |
|
200* |
|
|
hFE2 |
VCE=(–)10V, IC=(–)250mA |
20 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)100mA |
|
400 |
|
MHz |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
(5.0) |
|
pF |
|
|
|
|
4.2 |
|
pF |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
(4.2) |
|
pF |
|
|
|
|
3.4 |
|
pF |
|
|
|
|
|
|
|
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83198HA (KT)/41694TH (KOTO) 8-7036 No.3644–1/4
2SA1777/2SC4623
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
(–)1.0 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)250 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)250 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)3 |
|
|
V |
* : The 2SA1777/2SC4623 are classified by 50mA hFE as follows :
40 C 80 |
60 D 120 |
100 E 200 |
|
|
|
No.3644–2/4
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