Sanyo 2SC4615 Specifications

Ordering number:EN3398A

2SA1772 : PNP Epitaxial Planar Silicon Transistor

2SC4615 : NPN Triple Diffused Planar Silicon Transistor

2SA1772/2SC4615

High-Voltage Driver Applications

Features

· Large current capacity (I=1A).

C

· High breakdown votlage (V ≥400V).

CEO

Package Dimensions

unit:mm

2045B

[2SA1772/2SC4615]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

unit:mm

2044B

[2SA1772/2SC4615]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83198HA (KT)/12894TH AX-8287/5300TA (KOTO) X-6468, 6469 No.3398–1/5

2SA1772/2SC4615

( ) : 2SA1772

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)400	V
Collector-to-Emitter Voltage	VCEO		(–)400	V
Emitter-to-Base Voltage	VEBO		(–)5	V
Collector Current	IC		(–)1	A
Colletor Current (Pulse)	ICP		(–)2	A
Collector Dissipation	PC		1	W
		Tc=25˚C	15	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)300V, IE=0			(–)1.0	µA
Emitter Cutoff Current	IEBO	VEB=(–)4V, IC=0			(–)1.0	µA
DC Current Gain	hFE	VCE=(–)10V, IC=(–)100mA	40*		200*
Gain-Bandwidth Product	fT	VCE=(–)10V, IC=(–)50mA		(50)70		MHz
Output Capacitance	Cob	VCB=(–)30V, f=1MHz		(12)8		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)200mA, IB=(–)20mA			(–)1.0	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)200mA, IB=(–)20mA			(–)1.0	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)400			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞	(–)400			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=(–)10µA, IC=0	(–)5			V
Turn-ON Time	ton	See specified Test Circuit		(0.25)		µs
				0.11		µs
Storage Time	tstg	See specified Test Circuit		(3.0)		µs
				4.0		µs
Fall Time	tf	See specified Test Circuit		(0.3)		µs
				0.65		µs

* : The 2SA1772/2SC4615 are classified by 100mA hFE as follows :

40 C 80	60 D 120	100 E 200

Switching Time Test Circuit

Unit (resistance : Ω, capacitance : F)

No.3398–2/5