Sanyo 2SC4601 Specifications

Ordering number:EN3147

NPN Triple Diffused Planar Silicon Transistor

2SC4601

Switching Regulator Applications

Features

·Surface mount type device making the following possible.

-Reduction in the number of manufacturing processes for 2SC4601-applied equipment.

-High density surface mount applications. -Small size of 2SC4601-applied equipment.

·High breakdown voltage, high reliability.

·Fast switching speed.

·Wide ASO.

·Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2069C

[2SC4601]

	0.8	10.2				4.5	1.3
9.9				1.5max 8.8			1.4
3.0	1	2	3
							0 to 0.3
	0.8			1.2	1.35
							0.4

2.552.55

		1	: Base
	2.7	2	: Collector
		3	: Emitter
2.55	2.55	SANYO : SMP-FD

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		1100	V
Collector-to-Emitter Voltage	VCEO		800	V
Emitter-to-Base Voltage	VEBO		7	V
Collector Current	IC		1.5	A
Collector Current (Pulse)	ICP	PW≤300 s, duty cycle≤10%	5	A
Base Current	IB		0.8	A
Collector Dissipation	PC		1.65	W
		Tc=25˚C	40	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=800V, IE=0			10	µA
Emitter Cutoff Current	IEBO	VEB=5V, IC=0			10	µA
DC Current Gain	hFE1	VCE=5V, IC=0.1A	10*		40*
	hFE2	VCE=5V, IC=0.5A	8

* : For the hFE1 of the 2SC4601, specify two ranks or more in principle.

10 K 20	15 L 30	20 M 40

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

12099HA (KT)/6209MO, TS No.3147–1/4

2SC4601

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Gain-Bandwidth Product	fT	VCE=10V, IC=0.1A		15		MHz
Output Capacitance	Cob	VCB=10V, f=1MHz		35		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=0.75A, IB=0.15A			2.0	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=0.75A, IB=0.15A			1.5	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=1mA, IE=0	1100			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=5mA, RBE=∞	800			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=1mA, IC=0	7			V
Collector-to-Emitter Sustain Voltage	VCEO(sus)	IC=0.75A, IB1=–IB2=0.15A, L=5mH, clamped	800			V
Turn-ON Time	ton	IC=1A, IB1=0.2A, IB2=–0.4A, RL=400Ω, VCC=400V			0.5	µs
Storage Time	tstg	IC=1A, IB1=0.2A, IB2=–0.4A, RL=400Ω, VCC=400V			3.0	µs
Fall Time	tf	IC=1A, IB1=0.2A, IB2=–0.4A, RL=400Ω, VCC=400V			0.3	µs

Switching Time Test Circuit

No.3147–2/4