![](/html/5d/5dda/5ddaf860cccc701d4e511453a0139b3a60c156b5a712184398d12876a58db349/bg1.png)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Ordering number:EN3146
2SC4600
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing processes for 2SC4600-applied equipment.
-High density surface mount applications.
-Small size of 2SC4600-applied equipment.
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2069C
PW≤300µs, duty cycle≤10%
Tc=25˚C
0.8
123
0.8
2.55
[2SC4600]
10.2
1.2
2.55
4.5
1.3
8.8
1.5max
1.35
1.4
0 to 0.3
0.4
1 : Base
2.7
2.552.55
2 : Collector
3 : Emitter
SANYO : SMP-FD
008V
005V
7V
5A
01A
2A
56.1W
05W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
I,V005=
BC
BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A6.0=
C
A3=
C
* : For the hFE1 of the 2SC4600, specify two ranks or more in principle.
03L5104M0205N03
12099HA (KT)/6209MO, TS No.3146–1/4
sgnitaR
nimpytxam
*51*05
8
tinU
![](/html/5d/5dda/5ddaf860cccc701d4e511453a0139b3a60c156b5a712184398d12876a58db349/bg2.png)
2SC4600
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
V
V
T
V
bo
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(OEC
C
I
)sus(XEC
C
I
no
C
I
gts
C
I
f
C
I,V01=
EC
BC
I,A3=
B
I,A3=
B
I,A5=
I,A4=
I,A4=
I,A4=
A6.0=
C
zHM1=f,V01=
A6.0=
A6.0=
I,Am1=
0=008V
E
R,Am5=
=∞ 005V
EB
I,Am1=
0=7V
C
1B
I,A5.2=
1B
1B
1B
1B
Hµ05=L,A1=005V
I–=
2B
I,A8.0=
2B
I,A8.0=
2B
I,A8.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
81zHM
08Fp
depmalc,Hm1=L,A1=005V
R,A6.1–=
05= Ω V,
L
R,A6.1–=
05= Ω V,
L
R,A6.1–=
05= Ω V,
L
V002=
CC
V002=
CC
V002=
CC
tinU
0.1V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.3146–2/4