Sanyo 2SC4599 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

Ordering number:EN3145

2SC4599

9.93.0

Features

· Surface mount type device making the following
possible.

-Reduction in the number of manufacturing pro­cesses for 2SC4599-applied equipment.

-High density surface mount applications.

-Small size of 2SC4599-applied equipment.

· High breakdown voltage, high reliability.

· Fast switching speed.

· Wide ASO.

· Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

B

C

Package Dimensions

unit:mm

2069C

PW≤300µs, duty cycle≤10%

Tc=25˚C

0.8

123

0.8

2.55

[2SC4599]

10.2

4.5

1.3

8.8

1.5max

1.2

2.55

1.35

1.4

0 to 0.3

0.4

1 : Base

2.7

2.552.55

2 : Collector
3 : Emitter
SANYO : SMP-FD

008V
005V
7V
3A
6A
1A

56.1W
04W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC

V

OBE

I,V005=

BC
BE

0=01Aµ

E

I,V5=

0=01Aµ

C

A3.0=

C

A5.1=

C

* : For the hFE1 of the 2SC4599, specify two ranks or more in principle.

03L5104M0205N03

11599HA (KT)/6209MO, TS No.3145–1/4

sgnitaR

nimpytxam

*51*05

8

tinU

2SC4599

retemaraPlobmySsnoitidnoC

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

V

T

V

bo

I

)tas(EC

C

I

C

)tas(EB

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I

)sus(XEC

C

I

no

C

I

gts

C

I

f

C

I,V01=

EC
BC

I,A2=
I,A2=
I,A2=

A3.0=

C

zHM1=f,V01=

I,A5.1=

A3.0=

B

I,A5.1=

A3.0=

B

I,Am1=

0=008V

E

R,Am5=

=∞ 005V

EB

I,Am1=

0=7V

C

I,A5.1=

1B

I,A4.0=

1B
1B
1B

2B

I,A4.0=

2B

I,A4.0=

2B

Switching Time Test Circuit

sgnitaR

nimpytxam

81zHM
05Fp

I,Hm2=L,A6.0=

2B

R,A8.0–=

001= Ω V,

L

R,A8.0–=

001= Ω V,

L

R,A8.0–=

001= Ω V,

L

depmalc,A6.0–=005V

V002=

CC

V002=

CC

V002=

CC

tinU

0.1V

5.1V

5.0sµ

0.3sµ

3.0sµ

No.3145–2/4