SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Ordering number:EN3143
2SC4597
Features
· Surface mount type device making the following
possible.
-Reduction in the number of manufacturing processes for 2SC4597-applied equipment.
-High density surface mount applications.
-Small size of 2SC4597-applied equipment.
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2069C
PW≤300µs, duty cycle≤10%
Tc=25˚C
0.8
123
0.8
2.55
[2SC4597]
10.2
1.2
2.55
4.5
1.3
8.8
1.5max
1.35
1.4
0 to 0.3
0.4
1 : Base
2.7
2.552.55
2 : Collector
3 : Emitter
SANYO : SMP-FD
005V
004V
7V
4A
8A
5.1A
56.1W
04W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
hEF1VECI,V5=
niaGtnerruCCD
hEF2VECI,V5=
hEF3VECI,V5=
V
OBC
V
OBE
I,V004=
BC
BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A4.0=
C
A2=
C
Am01=
C
* : For the hFE1 of the 2SC4597, specify two ranks or more in principle.
03L5104M0205N03
11599HA (KT)/6209MO, TS No.3143–1/4
sgnitaR
nimpytxam
*51*05
01
01
tinU
2SC4597
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
T
V
bo
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
I
no
C
V
I
gts
C
V
I
f
C
V
I,V01=
EC
BC
I,A2=
B
I,A2=
B
I,A2=
I,A3=
CC
I,A3=
CC
I,A3=
CC
A4.0=
C
zHM1=f,V01=
A4.0=
A4.0=
I,Am1=
0=005V
E
R,Am5=
=∞ 004V
EB
I,Am1=
0=7V
C
1B
I,A6.0=
1B
V002=
1B
V002=
1B
V002=
2B
I,A6.0=
2B
I,A6.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
02zHM
05Fp
I,Hm1=L,A2.0=
2B
R,A2.1–=
L
R,A2.1–=
L
R,A2.1–=
L
depmalc,A8.0–=004V
6.66= Ω,
6.66= Ω,
6.66= Ω,
tinU
8.0V
5.1V
5.0sµ
5.2sµ
3.0sµ
No.3143–2/4