Sanyo 2SC4579 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
900V/20mA Switching Applications
Ordering number:EN3243
2SC4579
10.2
18.0
Features
· High breakdown voltage.
· Small Cob.
· Wide ASO.
· High reliability (Adoption of HVP process).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2010C
[2SC4579]
3.6
OBC OEC OBE
5.6
2.55
5.1
2.7
1.2
0.8
123
2.7
2.55
4.5
1.3
6.3
15.1
14.0
0.4
1 : Base 2 : Collector 3 : Emitter JEDEC : T O-220AB EIAJ : SC-46
0002V 009V 5V 02Am 06Am
57.1W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
C
)tas(EB
I,V009=
BC BE EC EC BC
0=1Aµ
E
I,V4=
0=1Aµ
C
I,V5=
Am1=
C
I,V01=
Am1=
C
zHM1=f,V001=
I,Am2=
Am4.0=
B
I,Am2=
Am4.0=
B
11599HA (KT)/O269MO, TS No.3243–1/3
sgnitaR
nimpytxam
0205021
6zHM
6.1Fp
tinU
5V 2V
2SC4579
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
I
I,Am1=
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
0=0002V
E
R,Am1=
= 009V
EB
I,Am1=
0=5V
C
sgnitaR
nimpytxam
tinU
No.3243–2/3
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