SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:EN4728
2SC4563
Features
· High fT : fT=1.2GHz typ.
· High breakdown voltage : V
· High current : IC=500mA.
· Small reverse transfer capacitance : Cre=3.8pF
(VCB=30V).
· Adoption of FBET process.
CEO
Package Dimensions
unit:mm
≥80V.
2010C
[2SC4411]
3.6
5.1
2.7
6.3
15.1
4.5
1.3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
C
PC
C
hEF1VECI,V01=
hEF2VECI,V01=
T
123
2.55
1.2
14.0
0.8
1 : Base
0.4
2 : Collector
3 : Emitter
2.7
2.55
JEDEC : T O-220AB
EIAJ : SC-46
sgnitaR
nimpytxam
03002
02
2.1zHG
001V
08V
3V
005Am
0.1A
3.1W
01W
˚C
˚C
tinU
6.0V
2.1V
5.6
OBC
OEC
OBE
Tc=25˚C
V
OBC
V
OBE
V
I
)tas(EC
C
I
C
)tas(EB
I,V08=
BC
BE
EC
0=1.0Aµ
E
I,V2=
0=0.5Aµ
C
Am05=
C
Am005=
C
I,V01=
Am001=
C
I,Am003=
Am03=
B
I,Am003=
Am03=
B
11299HA (KT)/O0794TS (KOTO) BX-1681 No.4728–1/3
2SC4563
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
V
bo
V
er
I,Aµ01=
C
C
E
BC
BC
0=001V
E
R,Am1=
=∞ 08V
EB
I,Aµ001=
0=3V
C
zHM1=f,V03=
zHM1=f,V03=8.3Fp
sgnitaR
nimpytxam
4.4Fp
tinU
No.4728–2/3