Sanyo 2SC4548 Specifications
Ordering number:EN3188
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffuesd Planar Silicon Transistor
2SA1740/2SC4548
High-Voltage Driver Applications
Features
· High breakdown votlage. · Adoption of MBIT process.
· Excellent h linearlity.
FE
( ) : 2SA1740
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2038
[2SA1740/2SC4548]
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)400 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)400 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)5 |
V |
Collector Current |
IC |
|
(–)200 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)400 |
mA |
Collector Dissipation |
PC |
Mounted on ceramic board (250mm2×0.8mm) |
1.3 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
|
|
|
|
|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector Cutoff Current |
ICBO |
VCB=(–)300V, IE=0 |
|
|
(–)0.1 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
|
|
(–)0.1 |
µA |
DC Current Gain |
hFE |
VCE=(–)10V, IC=(–)50mA |
60* |
|
200* |
|
Gain-Bandwidth Product |
fT |
VCE=(–)30V, IC=(–)10mA |
|
70 |
|
MHz |
Output Capacitance |
Cob |
VCB=(–)30V, f=1MHz |
|
(5)4 |
|
pF |
Reverse Transfer Capacitance |
Cre |
VCB=(–)30V, f=1MHz |
|
(4)3 |
|
pF |
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
(–)0.8 |
|
V |
|
|
|
|
0.6 |
|
V |
|
|
|
|
|
|
|
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/7219YT, TS No.3188-1/4
2SA1740/2SC4548
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=(–)50mA, IB=(–)5mA |
|
|
(–)1.0 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)400 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)1mA, RBE=∞ |
(–)400 |
|
|
V |
Emiiter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=(–)10µA, IC=0 |
(–)5 |
|
|
V |
Turn-ON Time |
ton |
See specified Test Circuit |
|
0.25 |
|
µs |
Turn-OFF Time |
toff |
See specified Test Circuit |
|
5.0 |
|
µs |
* The 2SA1740/2SC4548 are classified by 50mA hFE as follows :
60 D 120 100 E 200
Marking 2SA1740 : AK 2SC4548 : CN
hFE rank : D, E
Switching Time Test Circuit
Unit (resistance : Ω, capacitance : F)
No.3188-2/4
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