Sanyo 2SC4520 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistors
High-Speed Switching Applications
Ordering number:EN3139
2SC4520
4.5
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
· Small-sized package.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2038A
[2SC4520]
1.6
0.4
OBC
OEC
OBE
2
× )mm8.03.1W
mm052(draobcimarecnodetnuoM
0.5
3
1.5
0.75
1
2
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
06V
54V
5V
5.1A
3A
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF1VECI,V2=
hEF2VECI,V2=
* : The 2SC4520 is classified by 100mA hFE as follows :
Marking : CK
V
OBC
V
OBE
V
T
V
bo
I,V54=
BC
BE
EC
BC
0=1Aµ
E
I,V3=
0=1Aµ
C
C
C
I,V2=
C
002R001082S041004T002
Am001=
A5.1=
Am001=
zHM1=f,V01=
hFE rank : R, S, T
D2598HA (KT)/7059MO, TS No.3139–1/4
nimpytxam
04
sgnitaR
*001*004
003zHM
31Fp
tinU
2SC4520
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
no
gts
f
I,Am008=
Am04=
B
I,Vm008=
Am04=9.03.1V
B
I,Aµ01=
0=06V
E
R,Am1=
=∞ 54V
EB
I,Aµ01=
0=5V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
52.07.0V
05001sn
051072sn
081053sn
tinU
No.3139–2/4
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