Sanyo 2SC4520 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Epitaxial Planar Silicon Transistors

High-Speed Switching Applications

Ordering number:EN3139

2SC4520

4.5

Features

· Adoption of FBET, MBIT process.

· Large current capacity.

· Low collector-to-emitter saturation voltage.

· Fast switching speed.

· Small-sized package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

PC

C

Package Dimensions

unit:mm

2038A

[2SC4520]

1.6

0.4

OBC
OEC
OBE

2

× )mm8.03.1W

mm052(draobcimarecnodetnuoM

0.5

3

1.5

0.75

1

2

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)

06V
54V
5V

5.1A
3A

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

hEF1VECI,V2=
hEF2VECI,V2=

* : The 2SC4520 is classified by 100mA hFE as follows :

Marking : CK

V

OBC

V

OBE

V

T

V

bo

I,V54=

BC
BE

EC
BC

0=1Aµ

E

I,V3=

0=1Aµ

C
C
C

I,V2=

C

002R001082S041004T002

Am001=

A5.1=

Am001=

zHM1=f,V01=

hFE rank : R, S, T

D2598HA (KT)/7059MO, TS No.3139–1/4

nimpytxam

04

sgnitaR

*001*004

003zHM
31Fp

tinU

2SC4520

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

I

)tas(EC

C

I

)tas(EB

C

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E
no
gts

f

I,Am008=

Am04=

B

I,Vm008=

Am04=9.03.1V

B

I,Aµ01=

0=06V

E

R,Am1=

=∞ 54V

EB

I,Aµ01=

0=5V

C

.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS

Switching Time Test Circuit

sgnitaR

nimpytxam

52.07.0V

05001sn
051072sn
081053sn

tinU

No.3139–2/4