Sanyo 2SC4519 Specifications

Ordering number:EN3138

NPN Epitaxial Planar Silicon Transistors

2SC4519

High-Speed Switching Applications

Features

Package Dimensions

·Adoption of FBET process.

·Low collector-to-emitter saturation voltage.

·Fast switching speed.

·Small-sized package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

unit:mm

2018A

			[2SC4519]
	0.4	3		0.5		0.16
				1.5	2.5	0~0.1
1	0.95	0.95	2	0.5
	1.9
	2.9
						1 : Base
				0.8	1.1	2 : Emitter

3 : Collector

SANYO : CP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		60	V
Collector-to-Emitter Voltage	VCEO		45	V
Emitter-to-Base Voltage	VEBO		5	V
Collector Current	IC		500	mA
Collector Current (Pulse)	ICP		1	A
Collector Dissipation	PC		200	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol			Conditions					Ratings		Unit
								min	typ	max
Collector Cutoff Current	ICBO		VCB=45V, IE=0							0.5	µA
Emitter Cutoff Current	IEBO		VEB=3V, IC=0							0.5	µA
DC Current Gain	hFE1		VCE=2V, IC=50mA					100*		400*
	hFE2		VCE=2V, IC=500mA					40
Gain-Bandwidth Product	fT		VCE=2V, IC=50mA						350		MHz
Output Capacitance	Cob		VCB=10V, f=1MHz						4		pF
* : The 2SC4519 is classified by 50mA hFE as follows :
		100	4 200	140 5 280	200	6 400
Marking : TT
hFE rank : 4, 5, 6

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2598HA (KT)/7059MO, TS No.3138–1/4

2SC4519

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=200mA, IB=10mA		0.15	0.45	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=200mV, IB=10mA		0.8	1.2	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=10µA, IE=0	60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, RBE=∞	45			V
Emitter-to-Base Breakdown Voltage	V(BR)EBO	IE=10µA, IC=0	5			V
Turn-ON Time	ton	See specified test circuit.		60	120	ns
Storage Time	tstg	See specified test circuit.		150	270	ns
Fall Time	tf	See specified test circuit.		200	350	ns

Switching Time Test Circuit

No.3138–2/4