Sanyo 2SC4493 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

High-Voltage Amplifier,

High-Voltage Switching Applications

Ordering number:EN3099

2SC4493

10.2

20.9

Features

· High breakdown voltage.

· Small Cob.

· High reliability (Adoption of HVP process).

· Intended for high-density mounting (Suitable for sets
whose height is restricted).

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

OBC
OEC
OBE

C

PC

C

Package Dimensions

unit:mm

2049C

[2SC4493]

0.9

11.5

1.6

0.8

9.4

2.55

1.2

123

2.55

4.5

1.3

11.0 8.8

0.4

1 : Base

2.7

2 : Collector
3 : Emitter
SANYO : TO-220MF

008V
008V
7V
02Am
06Am

56.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

niaGtnerruCCD

tcudorPhtdiwdnaB-niaGf

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

hEF1VECI,V5=
hEF2VECI,V5=

V

OBC

V

OBE

V

T

I

)tas(EC

C

I

)tas(EB

C

I,V008=

BC
BE

EC

0=1Aµ

E

I,V5=

0=1Aµ

C

Am2=

C

Am01=

C

I,V01=

Am2=

C

I,Am01=

Am2=

B

I,Am01=

Am2=5.1V

B

D2598HA (KT)/4139MO, TS No.3099–1/3

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01

04zHM

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1V

2SC4493

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egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV

egatloVnwodkaerBesaB-ot-rettimEV

ecnaticapaCtuptuOC

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

V

bo

I,Aµ001=

0=008V

E

R,Am1=

=∞ 008V

EB

I,Aµ001=

0=7V

C

BC

zHM1=f,V001=

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No.3099–2/3