Sanyo 2SC4491 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
L Load (Various Drivers)
Switching Applications
Ordering number:EN3036
2SC4491
4.5
2.5
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· Darlington connection.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base voltage.
· High DC current gain.
· Wide ASO.
· Large inductive load handling capability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
* : On-chip Zener diode (60±10V)
Package Dimensions
unit:mm
2064A
[2SC4491]
6.9
1.01.0
0.6
0.9
123
2.54
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
1.45
0.5
2.54
1.0
1.0
4.0
0.45
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
*05V
*05V
6V
2.1A
5.2A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ytilibapaCgnildnaHdaoLvitcudnIb/sE
h
V
OBC
V
OBE
V
EF
I
)tas(EC
C
I
C
)tas(EB
I,V04=
BC
BE
EC
0=01Aµ
E
I,V5=
0=01Aµ
C
I,V5=
Am005=
C
I,Am005=
Am2=
B
I,Am005=
Am2=
B
R,Hm001=L
001=
Ω
EB
D2598HA (KT)/4039MO, TS No.3036–1/3
sgnitaR
nimpytxam
00010005
0.15.1V
0.2V
51Jm
tinU
2SC4491
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
emiTno-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
no
gts
f
I,Aµ001=
0=050607V
E
R,Am1=
=∞ 050607V
EB
.tiucriCtseTdeificepseeS2.0sµ
.tiucriCtseTdeificepseeS2.2sµ
.tiucriCtseTdeificepseeS4.0sµ
Switching Time T est Circuit Es/b Test Circuit
sgnitaR
nimpytxam
tinU
No.3036–2/3
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