Sanyo 2SC4491 Specifications

Ordering number:EN3036

Applications

· Suitable for use in switching of L load (motor

drivers, printer hammer drivers, relay drivers).

Features

·Darlington connection.

·On-chip Zener diode of 60±10V between collector and base.

·Uniformity in collector-to-base voltage.

·High DC current gain.

·Wide ASO.

·Large inductive load handling capability.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter	Symbol
Collector-to-Base Voltage	VCBO
Collector-to-Emitter Voltage	VCEO
Emitter-to-Base Voltage	VEBO
Collector Current	IC
Collector Current (Pulse)	ICP
Collector Dissipation	PC
Junction Temperature	Tj
Storage Temperature	Tstg

* : On-chip Zener diode (60±10V)

NPN Epitaxial Planar Silicon Transistor

2SC4491

L Load (Various Drivers)

Switching Applications

Package Dimensions

unit:mm

2064A

			[2SC4491]		2.5
					1.45
			6.9		1.0
4.5	1.0				1.0
				0.6	4.0
	1.0	0.9		0.5
		1	2	3	0.45

1 : Emitter

2 : Collector

2.542.54 3 : Base

SANYO : NMP

Conditions

Ratings

Unit

50* V

50* V

6 V

1.2 A

2.5 A

1 W

150 ˚C

–55 to +150

˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=40V, IE=0			10	µA
Emitter Cutoff Current	IEBO	VEB=5V, IC=0			10	µA
DC Current Gain	hFE	VCE=5V, IC=500mA	1000	5000
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=500mA, IB=2mA		1.0	1.5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=500mA, IB=2mA			2.0	V
Inductiv Load Handling Capability	Es/b	L=100mH, RBE=100Ω	15			mJ

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2598HA (KT)/4039MO, TS No.3036–1/3

2SC4491

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=100µA, IE=0	50	60	70	V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, RBE=∞	50	60	70	V
Turn-on Time	ton	See specified Test Circuit.		0.2		µs
Storage Time	tstg	See specified Test Circuit.		2.2		µs
Fall Time	tf	See specified Test Circuit.		0.4		µs

Switching Time Test Circuit Es/b Test Circuit

No.3036–2/3