Sanyo 2SC4490 Specifications
Ordering number:EN3097
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display
Video Output Applications
Features
· High breakdown voltage (V
· Excellent high frequency characteristic.
· Adoption of MBIT process.
( ) : 2SA1710
CEO
≥300V).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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C
PC
C
Package Dimensions
unit:mm
2064
[2SA1710/2SC4490]
E : Emitter
C : Collector
B : Base
SANYO : NMP
OBC
OEC
OBE
003)–(V
003)–(V
5)–(V
001)–(Am
002)–(Am
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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h
V
OBC
OBE
EF
T
bo
BC
V
BE
V
EC
V
EC
I
)tas(EC
C
I
)tas(EB
C
V
BC
I,V002)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
I,V01)–(=
C
I,V03)–(=
C
I,Am02)–(=
B
I,Am02)–(=
B
Am01)–(=
Am01)–(=
Am2)–(=
Am2)–(=0.1)–(V
zHM1=f,V03)–(=
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/5169MO, TS No.3097–1/5
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*07*082
07zHM
)1.3(Fp
6.2Fp
tinU
6.0)–(V
2SA1710/2SC4490
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V
er
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
* : The 2SA1710/2SC4490 are classified by 100mA hFE as follows :
041Q07002R001082S041
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zHM1=f,V03)–(=
I,Aµ01)–(=
0=003)–(V
E
R,Am1)–(=
=∞ 003)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
)3.2(Fp
8.1Fp
tinU
No.3097–2/5
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