Sanyo 2SC4488 Specifications
Ordering number:EN3094
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1708/2SC4488
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage, large current capacity.
· Fast switching speed.
( ) : 2SA1708
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2064
[2SA1708/2SC4488]
E : Emitter
C : Collector
B : Base
SANYO : NMP
021)–(V
001)–(V
6)–(V
1)–(A
2)–(A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : The 2SA1708/2SC4488 are classified by 100mA hFE as follows :
002R001082S041004T002
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V001)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
I,V5)–(=
C
I,V01)–(=
C
Am001)–(=*001*004
Am001)–(=021zHM
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/4249MO, TS No.3094-1/5
sgnitaR
tinU
2SA1708/2SC4488
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
emITNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
V
bo
no
gts
f
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am004)–(=
B
I,Am004)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am04)–(=
Am04)–(=58.0)–(2.1)–(V
zHM1=f,V01)–(=5.8)31(Fp
0=021)–(V
=∞ 001)–(V
0=6)–(V
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS05)04(sn
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
sgnitaR
nimpytxam
)2.0–()6.0–(V
1.04.0V
)007(sn
058sn
tinU
No.3094-2/5
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