Sanyo 2SC4487 Specifications

Ordering number:EN3093

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1707/2SC4487

High-Current Switching Applications

Features

·Adoption of FBET, MBIT processes.

·Large current capacity, wide ASO.

·Low collector-to-emitter saturation voltage.

·Fast switching speed.

( ) : 2SA1707

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2064

[2SA1707/2SC4487]

E : Emitter

C : Collector

B : Base

SANYO : NMP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)60	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)6	V
Collector Current	IC		(–)3	A
Collector Current (Pulse)	ICP		(–)6	A
Collector Dissipation	PC		1	W
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter			Symbol			Conditions		Ratings		Unit
							min	typ	max
Collector Cutoff Current			ICBO		VCB=(–)40V, IE=0				(–)1	µA
Emitter Cutoff Current			IEBO		VEB=(–)4V, IC=0				(–)1	µA
DC Current Gain			hFE1		VCE=(–)2V, IC=(–)100mA		100*		400*
			hFE2		VCE=(–)2V, IC=(–)3A		35
Gain-Bandwidth Product			fT		VCE=(–)10V, IC=(–)50mA			150		MHz
* : 2SA1707/2SC4487 are classified by 100mA hFE as follows :
	100 R 200	140 S 280		200 T 400

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83098HA (KT)/6299MO, TS No.3093-1/5

2SA1707/2SC4487

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)2A, IB=(–)100mA		(–0.35)	(–0.7)	V
				0.2	0.5	V
Base-to-Emitter Saturation Voltage	VBE(sat)	IC=(–)2A, IB=(–)100mA		(–)0.95	(–)1.2	V
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		(39)25		pF
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)60			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)1mA, RBE=∞	(–)50			V
Emitter-to-Base Breakdown Votage	V(BR)EBO	IE=(–)10µA, IC=0	(–)6			V
Turn-ON TIme	ton	See specified Test Circuit		70		ns
Storage Time	tstg	See specified Test Circuit		(450)		ns
				650		ns
Fall Time	tf	See specified Test Circuit		35		ns

Switching Time Test Circuit

Unit (resistance : Ω, capacitance : F)

No.3093-2/5