Sanyo 2SC4487 Specifications
Ordering number:EN3093
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1707/2SC4487
High-Current Switching Applications
Features
· Adoption of FBET, MBIT processes.
· Large current capacity, wide ASO.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
( ) : 2SA1707
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2064
[2SA1707/2SC4487]
E : Emitter
C : Collector
B : Base
SANYO : NMP
OBC
OEC
OBE
06)–(V
05)–(V
6)–(V
3)–(A
6)–(A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : 2SA1707/2SC4487 are classified by 100mA hFE as follows :
002R001082S041004T002
OBC
OBE
1VECI,V2)–(=
EF
hEF2VECI,V2)–(=
T
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
V
BC
V
BE
V
EC
I,V04)–(=
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
C
C
I,V01)–(=
C
Am001)–(=
A3)–(=53
Am05)–(=051zHM
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/6299MO, TS No.3093-1/5
sgnitaR
*001*004
tinU
2SA1707/2SC4487
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
emITNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
I
)tas(EB
V
bo
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,A2)–(=
C
C
C
C
E
B
I,A2)–(=
B
BC
R,Am1)–(=
Am001)–(=
Am001)–(=59.0)–(2.1)–(V
zHM1=f,V01)–(=52)93(Fp
I,Aµ01)–(=
0=06)–(V
E
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS53sn
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
sgnitaR
nimpytxam
)53.0–()7.0–(V
2.05.0V
)054(sn
056sn
tinU
No.3093-2/5
Loading...