Sanyo 2SC4474 Specifications
Ordering number:EN3018
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1697/2SC4474
High-Definition CRT Display,
Video Output Applications
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=300MHz.
· High breakdown voltage : V
=200V min.
CEO
· Small reverse transfer capacitance and excellent high
frequency characteristic :
Cre=2.2pF/NPN, 2.7 pF/PNP
· Adoption of FBET process.
· Micaless type.
( ) : 2SA1697
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Tc=50˚C
Package Dimensions
unit:mm
2041
[2SA1697/2SC4474]
E : Emitter
C : Collector
B : Base
SANYO : TO-220ML
002)–(V
002)–(V
3)–(V
002)–(Am
003)–(Am
8.1W
01W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
* hFE1 : The 2SA1697/2SC4474 are classified by 10mA hFE as follows :
08C04021D06002E001023F061
hEF1V
hEF2V
V
OBC
OBE
T
BC
V
BE
EC
EC
V
EC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V051)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V03)–(=
C
Am01)–(=*04*023
Am001)–(=02
Am05)–(=003zHM
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/4039MO, TS No.3018-1/4
sgnitaR
tinU
2SA1697/2SC4474
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
V
bo
er
BC
V
BC
I
)tas(EC
C
I
)tas(EB
C
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am03)–(=
Am3)–(=0.1)–(V
B
I,Am03)–(=
Am3)–(=0.1)–(V
B
sgnitaR
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7.2Fp
)2.3(Fp
2.2Fp
)7.2(Fp
tinU
No.3018-2/4
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