Sanyo 2SC4460 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
500V/15A Switching Regulator Applications
Ordering number:EN3331
2SC4460
16.0
21.0
Features
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC OEC OBE
PW300µs, duty cycle10%
Tc=25˚C
Package Dimensions
unit:mm
2039D
[2SC4460]
3.4
5.0
4.0
12
5.45
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
008V 005V 7V 51A 52A 4A 3W 55W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V5= hEF2VECI,V5=
V
OBC
V
OBE
I,V005=
BC BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.1=
C
A6=
C
* : For the hFE1 of the 2SC4460, specify two ranks or more in principle.
03L5104M0205N03
D2598HA (KT)/7190MH, TA (KOTO) No.3331–1/4
sgnitaR
nimpytxam
*51*05
8
tinU
2SC4460
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
T
V
bo
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
V
no
V
gts
V
f
I,V01=
EC BC
I,A6=
B
I,A6=
B
I,A5=
CC CC CC
A2.1=
C
zHM1=f,V01= A2.1= A2.1=
I,Am1=
0=008V
E
R,Am5=
= 005V
EB
I,Am1=
0=7V
C
I–=
1B
2B
I5,V002=
I5.2–=
1B
I5,V002= I5,V002=
2BI=C
I5.2–=
1B
2BI=C
I5.2–=
1B
2BI=C
Switching Time Test Circuit
sgnitaR
nimpytxam
81zHM 061Fp
depmalC,Hµ005=L,A2=005V
R,A7=
6.82=
L
R,A7=
6.82=
L
R,A7=
6.82=
L
tinU
0.1V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.3331–2/4
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