Sanyo 2SC4453 Specifications

Page 1
Ordering number : ENN2812A
2SC4453
NPN Epitaxial Planar Silicon Transistor
2SC4453
High-Speed Switching Applications
Features
Fast switching speed.
Low collector saturation voltage.
High gain-bandwidth product.
Small collector capacity.
Package Dimensions
unit : mm
2018B
[2SC4453]
0.4
3
0.95
0.95
1
2
1.9
2.9
0.5
1.5
0.5
0.16
0 to 0.1
2.5
1 : Base 2 : Emitter 3 : Collector
1.1
0.8
SANYO : CP
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I Base Current I Collector Dissipation P Junction T emperature Tj 150 °C Storage T emperature T stg --55 to +150 °C
CBO CES CEO EBO
C
CP
B
C
40 V 40 V 15 V
5V 200 mA 500 mA
40 mA
200 mW
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h
CBO EBO
FE
VCB=20V, IE=0 0.1 µA VEB=3V, IC=0 0.1 µA VCE=1V, IC=10mA 50* 90 200*
Marking : ST Continued on next page.
* : The 2SC4453 is classified by 5mA h
Rank 2 3 4
h
50 to 100 70 to 140 100 to 200
FE
as follows :
FE
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2001 TS IM / D2598 HA (KT) / O278 MO, TS
No.2812-1/4
Page 2
2SC4453
Continued from preceding page.
Parameter Symbol Conditions
Gain-Bandwidth Product f Output Capacitance Cob VCB=5V, f=1MHz 1.4 4.0 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA 0.13 0.25 V Base-to-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 0.80 0.85 V Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn ON Time t Storage Time t Fall Time t
(BR)CBOIC (BR)CEOIC (BR)EBOIE
on
stg
VCE=10V, IC=10mA 450 750 MHz
T
=10µA, IE=0 40 V =1mA, RBE= 15 V
=10µA, IC=0 5 V See specified Test Circuit. 8.0 ns See specified Test Circuit. 6.0 ns See specified Test Circuit. 12 ns
f
Ratings
min typ max
Unit
ton, t
Test Circuit t
off
V
IN
PW300ns D.C.2%
V
IN
V
OUT
VBB= --3V VIN=+15V
10%
t
on
3.3k
50
V
3.3k
0.005µF 0.005µF
0.1µF 0.1µF
BB
V
90%
V
OUT
IN
220
0.0023µF0.0023µF
VBB=+12 VIN= --15V
10%
t
off
50
+
3V
0.1µF
90%
Test Circuit
stg
V
OUT
Sampling oscilloscope
PW300ns D.C.2%
V
890
++
0.1µF
90
10V
OUT
1k
Sampling oscilloscope
"A"
V
IN
--10V
500
0.1µF
50
V
500
0.0023µF0.0023µF
10µF10µF
++
11V
0
V
IN
10% Waveforms at "A"
0
OUT
10%
t
stg
I
-- V
mA
-­C
240
200
160
C
3.5mA
CE
3.0mA
2.5mA
2.0mA
1.5mA
120
80
Collector Current, I
40
0
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, V
1.0mA
CE --
0.5mA
V
IB=0
ITR06987
I
-- V
mA
-­C
24
20
16
C
160µA
CE
140µA
120µA
100µA
12
8
Collector Current, I
4
0
048121620
Collector-to-Emitter Voltage, V
80µA
60µA 40µA 20µA
IB=0
CE --
ITR06988
V
No.2812-2/4
PS
Page 3
h
-- I
25
--25
FE
C
°
C
°
C
°
5
3
2
FE
100
7 5
DC Current Gain, h
3
2
10
0.1 1.0 10 100
Ta=75
23 5 23 5 23 5 2
Collector Current, I
2
Cib -- V
C
EB
C --
mA
2SC4453
VCE=1V
ITR06989
f=1MHz
3 2
1000
-- MHz
7
T
5 3
2
100
7 5
Gain-Bandwidth Product, f
3 2
357235722
Collector Current, IC -- mA
2
f
-- I
T
Cob -- V
C
VCE=10V
1001.0 10
ITR06990
CB
f=1MHz
10
7
-- pF
5
3 2
1.0 7
Input Capacitance, Cib
5
3 2
1.0
7 5
(sat) -- V
3
CE
2
Ta= --25
25°
0.1
7
Collector-to-Emitter
Saturation V oltage, V
5
23 752537
1.0 100.1
VCE(sat) -- I
EB
C
-- V
ITR06991
IC / IB=10
°C
75
°
C
C
10
7
-- pF
5
3 2
1.0 7
5
Output Capacitance, Cob
3 2
23 57 23 57
0.1 1.0 10
Collector-to-Base Voltage, V
5
3
2
VBE(sat) -- I
(sat) -- V
BE
1.0 7
5
3
2
Base-to-Emitter
Saturation V oltage, V
Ta= --25
75
°C
C
°
25°
23 57
-- VEmitter-to-Base Voltage, V
CB
100
ITR06992
C
IC / IB=10
C
3
2357 23 57 23 57
0.1 1.0 10 100
100
7 5
3
2
10
7 5
Switching Time, SW Time -- µs
3
2
Collector Current, I
SW Time -- I
C --
mA
C
IC=10IB1= --10I
t
stg
t
f
t
r
10 100
Collector Current, IC -- mA
ITR06993
VCC=3V
B2
t
d
ITR06995
0.1
2357 2357 23 57
0.1 1.0 10 100
240
200
Collector Current, I
PC -- Ta
C --
mA
ITR06994
-- mW
160
C
120
80
40
Collector Dissipation, P
23572357
0
20 40 60 80 100 120 140 1600
Ambient Temperature, Ta
-- °C
ITR06996
No.2812-3/4
Page 4
2SC4453
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of December, 2001. Specifications and information herein are subject to change without notice.
No.2812-4/4
PS
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