Sanyo 2SC4453 Specifications

Ordering number : ENN2812A

2SC4453

NPN Epitaxial Planar Silicon Transistor

2SC4453

High-Speed Switching Applications

Features

•

Fast switching speed.

•

Low collector saturation voltage.

•

High gain-bandwidth product.

•

Small collector capacity.

•

Ultrasmall-sized package permitting the 2SC4453­applied sets to be made small and slim.

Package Dimensions

unit : mm

2018B

[2SC4453]

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

1.5

0.5

0.16

0 to 0.1

2.5

1 : Base
2 : Emitter
3 : Collector

1.1

0.8

SANYO : CP

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CES
CEO
EBO

C

CP

B

C

40 V
40 V
15 V

5V
200 mA
500 mA

40 mA

200 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

CBO
EBO

FE

VCB=20V, IE=0 0.1 µA
VEB=3V, IC=0 0.1 µA
VCE=1V, IC=10mA 50* 90 200*

Marking : ST Continued on next page.

* : The 2SC4453 is classified by 5mA h

Rank 2 3 4

h

50 to 100 70 to 140 100 to 200

FE

as follows :

FE

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2001 TS IM / D2598 HA (KT) / O278 MO, TS

No.2812-1/4

2SC4453

Continued from preceding page.

Parameter Symbol Conditions

Gain-Bandwidth Product f
Output Capacitance Cob VCB=5V, f=1MHz 1.4 4.0 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA 0.13 0.25 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 0.80 0.85 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn ON Time t
Storage Time t
Fall Time t

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VCE=10V, IC=10mA 450 750 MHz

T

=10µA, IE=0 40 V
=1mA, RBE=∞ 15 V

=10µA, IC=0 5 V
See specified Test Circuit. 8.0 ns
See specified Test Circuit. 6.0 ns
See specified Test Circuit. 12 ns

f

Ratings

min typ max

Unit

ton, t

Test Circuit t

off

V

IN

PW≥300ns
D.C.≤2%

V

IN

V

OUT

VBB= --3V
VIN=+15V

10%

t

on

3.3kΩ

50Ω

V

3.3kΩ

0.005µF 0.005µF

0.1µF 0.1µF

BB

V

90%

V

OUT

IN

220Ω

0.0023µF0.0023µF

VBB=+12
VIN= --15V

10%

t

off

50Ω

+

3V

0.1µF

90%

Test Circuit

stg

V

OUT

Sampling oscilloscope

PW≥300ns
D.C.≤2%

V

890Ω

++

0.1µF

90Ω

10V

OUT

1kΩ

Sampling oscilloscope

"A"

V

IN

--10V

500Ω

0.1µF

50Ω

V

500Ω

0.0023µF0.0023µF

10µF10µF

++

11V

0

V

IN

10% Waveforms at "A"

0

OUT

10%

t

stg

I

-- V

mA

-­C

240

200

160

C

3.5mA

CE

3.0mA

2.5mA

2.0mA

1.5mA

120

80

Collector Current, I

40

0

0 0.4 0.8 1.2 1.6 2.0

Collector-to-Emitter Voltage, V

1.0mA

CE --

0.5mA

V

IB=0

ITR06987

I

-- V

mA

-­C

24

20

16

C

160µA

CE

140µA

120µA

100µA

12

8

Collector Current, I

4

0

048121620

Collector-to-Emitter Voltage, V

80µA

60µA
40µA
20µA

IB=0

CE --

ITR06988

V

No.2812-2/4

PS