Sanyo 2SC4452 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
Ordering number:EN2811
2SC4452
0.3
Features
· Fast switching speed.
· Low collector saturation voltage.
· High gain-bandwidth product.
· Small collector capacity.
· Very small-sized package permitting the 2SC4452­applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloC
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SC4452 is classified by 10mA hFE as follows :
Marking : ST hFE rank : 2, 3, 4
OBC
V
SEC
V
OEC OBE
C
PC
B
C
OBC OBE
h
EF
T
bo
V V V V V
I,V02=
BC
I,V3=
BE
C
I,V1=
EC
C
I,V01=
EC BC
0012050413070024001
Package Dimensions
unit:mm
2059B
[2SC4452]
0.425
2.1
1.250
0.425
0=1.0Aµ
E
0=1.0Aµ
Am01=
Am01=
C
zHM1=f,V5=
3
12
0.65
0.65
2.0
0.15
0~0.1
0.3 0.6
0.9
1 : Base 2 : Emitter 3 : Collector SANYO : MCP
sgnitaR
nimpytxam
*0509*002
054057zHM
4.10.4Fp
0.2
04V 04V 51V 5V 002Am 005Am 04Am 051Wm
˚C ˚C
tinU
D2598HA (KT)/O278MO, TS No.2811–1/4
2SC4452
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E no gts
f
I,Am01=
Am1=
B
I,Am01=
Am1=08.058.0V
B
I,Aµ01=
0=04V
E
R,Am1=
= 51V
EB
I,Aµ01=
0=5V
C
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
sgnitaR
nimpytxam
31.052.0V
0.8sn
0.6sn 21sn
tinU
No.2811–2/4
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