Ordering number:EN3013
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1687/2SC4446
Low-Frequency
General-Purpose Amplifier Applications
Features
· Very small-sized package permitting the 2SA1687/
2SC4446-applied sets to be made small and slim.
· High V
EBO
.
( ) : 2SA1687
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Package Dimensions
unit:mm
2059
[2SA1687/2SC4446]
B : Base
C : Collector
E : Emitter
SANYO : MCP
06)–(V
05)–(V
51)–(V
051)–(Am
003)–(Am
03)–(Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : The 2SA1687/2SC4446 are classified by 1mA hFE as follows :
072553100460020067003
V
OBC
V
OBE
V
EF
V
T
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
I,V04)–(=
BC
BE
EC
EC
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*531*006
C
I,V6)–(=
Am1)–(=031zHM
C
Marking : D (2SA1687) hFE rank : 5, 6, 7
H (2SC4446)
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5189MO, TS No.3013-1/5
sgnitaR
tinU
2SA1687/2SC4446
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
bo
no
gts
f
BC
I,Am05)–(=
Am5)–(=
B
I,Am05)–(=
Am5)–(=58.0)–(2.1)–(V
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
zHM1=f,V6)–(=
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
Switching Time T est Circuit
Unit (resistance : Ω, capacitance : F)
sgnitaR
nimpytxam
51.05.0)–(V
)52.0–(V
)5.3(Fp
2.2Fp
)064(sn
095sn
)06(sn
011sn
tinU
No.3013-2/5