Sanyo 2SC4446 Specifications

Ordering number:EN3013
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1687/2SC4446
Low-Frequency
General-Purpose Amplifier Applications
Features
· Very small-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.
· High V
EBO
.
( ) : 2SA1687
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
C
Package Dimensions
unit:mm
2059
[2SA1687/2SC4446]
B : Base C : Collector E : Emitter
SANYO : MCP
06)–(V
05)–(V
51)–(V
051)–(Am
003)–(Am
03)–(Am 051Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : The 2SA1687/2SC4446 are classified by 1mA hFE as follows :
072553100460020067003
V
OBC
V
OBE
V
EF
V
T
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
I,V04)–(=
BC BE EC EC
0=1.0)–(Aµ
E
I,V01)–(=
0=1.0)–(Aµ
C
I,V6)–(=
Am1)–(=*531*006
C
I,V6)–(=
Am1)–(=031zHM
C
Marking : D (2SA1687) hFE rank : 5, 6, 7
H (2SC4446)
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5189MO, TS No.3013-1/5
sgnitaR
tinU
2SA1687/2SC4446
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
V
bo
no gts
f
BC
I,Am05)–(=
Am5)–(=
B
I,Am05)–(=
Am5)–(=58.0)–(2.1)–(V
B
I,Aµ01)–(=
0=06)–(V
E
R,Am1)–(=
= 05)–(V
EB
I,Aµ01)–(=
0=51)–(V
C
zHM1=f,V6)–(=
tiucriCtseTdeificepseeS05sn tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
Switching Time T est Circuit
Unit (resistance : , capacitance : F)
sgnitaR
nimpytxam
51.05.0)–(V )52.0–(V
)5.3(Fp
2.2Fp
)064(sn
095sn
)06(sn
011sn
tinU
No.3013-2/5
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