Sanyo 2SC4432 Specifications

Ordering number : ENN3184A

2SC4432

NPN Epitaxial Planar Silicon Transistor

2SC4432

High-Frequency

General-Purpose Amplifier Applications

Features

•

High power gain.

•

High cutoff frequency.

•

Small Cob, Cre.

•

Ultrasmall-sized package permitting the 2SC4432­applied sets to be made small and slim.

Package Dimensions

unit : mm

2018B

[2SC4432]

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

2.5

1.5

0.5

1.1

0.8

0.16

0 to 0.1

1 : Base
2 : Emitter
3 : Collector

SANYO : CP

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

C

40 V
18 V

3V

50 mA

250 mW

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 0.7 1.2 pF
Reverse Transfer Capacitance Cre VCB=10V , f=1MHz 0.45 pF

Marking : RT Continued on next page.

* : The 2SC4432 is classified by 5mA h

Rank 3 4 5

h

60 to 120 90 to 180 135 to 270

FE

FE

CBO
EBO

FE

as follows :

VCB=18V, IE=0 0.1 µA
VEB=2V, IC=0 0.1 µA
VCE=10V, IC=5mA 60* 270*
VCE=10V, IC=5mA 750 MHz

T

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

D2001 TS IM / D1598 HA (KT) / 7219 YT, TS

No.3184-1/3

2SC4432

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA 0.2 V
Base-to-Collector Time Constant rbb’C
Power Gain PG VCE=10V, IC=10mA, f=100MHz 28 dB

VCE=10V, IC=5mA, f=31.9MHz 23 ps

C

PG Test Circuit

to 5pF

Ratings

min typ max

Unit

50Ω

to 30pF

1000pF

L1

to 22pF to 22pF

V

B

input

L1 : 1mmφ plated wire, 10mmφ 5T, pitch 15mm,

tap : 2T from base side

L2 : 1mmφ plated wire, 10mmφ 7T, pitch 10mm,

tap : 2T from VC side

L3 : 1mmφ enamel wire, 10mmφ 3T, pitch 10mm

h

-- I

5

3
2

FE

100

7
5

3
2

DC Current Gain, h

10

7
5

2537102537 2 2537

FE

1.00.1

Collector Current, I

Cre -- V

-- pF

7
5

3
2

1.0
7
5

3
2

Reverse Transfer Capacitance, Cre

0.1

75

2537 2 53

0.1

2537

Collector-to-Base Voltage, V

C

C

CB

1000pF

V

C

-- mA

CB

L3

to 30pF

VCE=10V

101.0

-- V

output

50Ω

100

ITR06895

f=1MHz

ITR06897

3

2

-- MHz
T

1000

7

5

3

2

Gain-Bandwidth Product, f

100

75

Collector Current, IC -- mA

30

28

26

-- dB

24

22

20

Power Gain, PG

18

16

7523

Collector Current, IC -- mA

f

-- I

T

C

VCE=10V

25337

PG -- I

25377

101.0

100

ITR06896

C

VCE=10V

25 53377

101.0

ITR06898

No.3184-2/3

PS