Sanyo 2SC4426 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
800V/3A Switching Regulator Applications
Ordering number:EN2849
2SC4426
16.0
21.0
Features
· High breakdown voltage, high reliability.
· Fast switching speed (tf : 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating easy mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC OEC OBE
PW300µs, duty cycle10%
Tc=25˚C
Package Dimensions
unit:mm
2039D
[2SC4426]
3.4
5.0
4.0
12
5.45
2.8
2.0
1.0
3
3.5
5.45
5.6
3.1
8.0
22.0
2.0
2.0
20.4
0.6
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
0011V 008V 7V 3A 01A
5.1A 3W 54W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF*1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
I,V008=
BC BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.0=
C
A1=
C
* : The hFE1 of the 2SC4426 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
02K0103L5104M02
D1898HA (KT)/N248MO, TS No.2849–1/4
sgnitaR
nimpytxam
0104 8
tinU
2SC4426
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A5.1=
)tas(EC
C
I
C
)tas(EB
V
T
bo
no gts
f
EC
V
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
I
C
I
C
I
C
A3.0=
B
I,A5.1=
A3.0=
B
I,V01=
A2.0=
C
zHM1=f,V01=
I,Am1=
0=0011V
E
R,Am5=
= 008V
EB
I,Am1=
0=7V
C
I,A5.1=
I,A2=
1B
I,A2=
1B
I,A2=
1B
I,A3.0=
1B
2B
I,A4.0=
2B
I,A4.0=
2B
I,A4.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
51zHM 06Fp
depmalC,Hm2=L,A3.0–=008V
R,A8.0–=
002= ,Ω V
L
R,A8.0–=
002= ,Ω V
L
R,A8.0–=
002= ,Ω V
L
V004=
CC
V004=
CC
V004=
CC
tinU
0.2V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.2849–2/4
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