Sanyo 2SC4414 Specifications
Ordering number:EN3012
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1683/2SC4414
Low-Frequency General-Purpose Amplifier,
Low-Frequency Power Amplifier Applications
Features
· Adoption of FBET process.
· High breakdown voltage : V
CEO
>80V.
( ) : 2SA1683
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
* : 2SA1683/2SC4414 are classified by 50mA hFE as follows :
OBC
OEC
OBE
C
PC
B
C
OBC
OBE
1VECI,V5)–(=
EF
hEF2VECI,V5)–(=
T
Package Dimensions
unit:mm
2033
[2SA1683/2SC4414]
B : Base
C : Collector
E : Emitter
SANYO : SPA
001)–(V
08)–(V
5)–(V
005)–(Am
008)–(Am
001)–(Am
003Wm
˚C
˚C
sgnitaR
nimpytxam
V
BC
V
BE
V
EC
I,V06)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
C
C
Am05)–(=
Am004)–(=06
I,V01)–(=
C
Am01)–(=021zHM
*001*004
tinU
002R001082S041004T002
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/5189MO, TS No.3012-1/4
2SA1683/2SC4414
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
)tas(EC
C
I
)tas(EB
C
V
bo
NO
gts
f
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am004)–(=
B
I,Am004)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
EB
I,Aµ01)–(=
C
Am04)–(=
Am04)–(=9.0)–(2.1)–(V
zHM1=f,V01)–(=5)7(Fp
0=001)–(V
=∞ 08)–(V
0=5)–(V
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS09)08(sn
Switching Time T est Circuit
VBE=–5V, VCC=20V
10IB1=–10IB2=IC=200mA
(For PNP, the polarity is reserved.)
Unit (resistance : Ω, capacitance : F)
sgnitaR
nimpytxam
61.05.0)–(V
)02.0–(V
)005(
056
tinU
sn
No.3012-2/4
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