Sanyo 2SC4364 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
VHF, UHF/MIX. OSC. Low-Voltage
High-Frequency Amplifier Applications
Ordering number:EN3008
2SC4364
0.4
Features
· Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
C
Package Dimensions
unit:mm
2018B
[2SC4364]
0.16
3
1
0.95
0.95
1.9
2.9
OBC OEC OBE
0.5
2.5
1.5
2
0.5
0~0.1
1 : Base
1.1
0.8
2 : Emitter 3 : Collector SANYO : CP
52V 51V 3V 03Am 052Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
* : The 2SC4364 is classified by 3mA hFE as follows :
h
V
OBC
V
OBE
V
EF
V
T
V
bo
V
er
I,V51=
BC BE EC EC BC BC
0=0.1Aµ
E
I,V2=
0=0.1Aµ
C
I,V3=
Am3=
C
I,V3=
Am3=
C
zHM1=f,V3= zHM1=f,V3=
082040213060024001
(Note) Marking : OT
hFE rank : 2, 3, 4
D2598HA (KT)/6069MO, TS No.3008–1/5
sgnitaR
nimpytxam
*04*002
0.3zHG
57.03.1Fp
7.0Fp
tinU
2SC4364
erugiFesioNFNVECI,V3=
NF Test Circuit
retemaraPlobmySsnoitidnoC
2
niaGrefsnarTdrawroF
niaGrewoPelbaliavAmumixaMGAMVECI,V3=
V
|e12S|
EC
sgnitaR
nimpytxam
I,V3=
C C C
zHG9.0=f,Am3= zHG9.0=f,Am3=11Bd zHG9.0=f,Am3=0.30.5Bd
zHM009
1C 2C 3C 4C 5C 1L 2L 3L HC
W l,mm5.1 enilpirtSmm52 W l,mm4 enilpirtSmm52
5.0 φ l, mm04
Fp5~
Fp01~ Fp01~ Fp01~ Fp01~
erocdaeb+t2
7Bd
tinU
No.3008–2/5
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