Sanyo 2SC4272 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Epitaxial Planar Silicon Transistor
27MHz CB Transceiver Driver Applications
Ordering number:EN2970
2SC4272
4.5
Features
· Small size making it easy to provide high-density, small-sized hybrid ICs.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC REC OEC OBE
C
PC
C
Package Dimensions
unit:mm
2038A
[2SC4272]
1.6
0.4
R
051= 57V
EB
2
mm052(draobcimarecnodetnuoM
× )mm8.03.1W
0.5
3
1.5
0.75
1
2
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
57V
54V 5V
0.1A
5.1A
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
hEF*VECI,V5=
* : The 2SC4272 are classified by 500mA hFE as follows :
V
OBC
V
OBE
V
T
V
bo
I,V04=
BC BE
EC BC
0=0.1Aµ
E
I,V4=
0=0.1Aµ
C C
I,V01=
C
021D06002E001023F061
Am005= Am05=
zHM1=f,V01=
Marking : CH hFE rank : D, E, F
D2598HA (KT)/2219MO, TS No.2970–1/4
nimpytxam
081052zHM
sgnitaR
*06*023
51Fp
tinU
2SC4272
retemaraPlobmySsnoitidnoC
rewoPtuptuOP
ycneiciffErotcelloC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
Collector Effieiency Test Circuit
sgnitaR
nimpytxam
V
O
ηc
CC
I
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
REC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,Am005=
Am05=
B
I,Am005=
Am05=
B
I,Aµ01=
0=57V
E
R,Am1=
051= 57V
EB
R,Am1=
= 54V
EB
I,Aµ01=
0=5V
C
Wm53=niP,zHM72=f,V21=
.tiucrictsetdeificepseeS
0.18.1W 06%
2.06.0V
9.02.1V
tinU
No.2970–2/4
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