Sanyo 2SC4223 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
800V/1.5A Switching Regulator Applications
Ordering number:EN2762A
2SC4223
10.2
20.9
Features
· High breakdown voltage, high reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Suitable for sets whose height is restricted.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC OEC OBE
PW300µs, duty cycle10%
Ta=25˚C Tc=25˚C
Package Dimensions
unit:mm
2049C
[2SC4223]
0.9
11.5
1.6
0.8
9.4
2.55
1.2
123
2.55
4.5
11.0 8.8
0.4
1 : Base 2 : Collector
2.7
3 : Emitter SANYO : TO-220MF
1.3
0011V 008V 7V
5.1A 5A
8.0A
56.1W 04W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
hEF1VECI,V5= hEF2VECI,V5=
V
OBC
V
OBE
I,V008=
BC BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A1.0=
C
A5.0=
C
* : The hFE1 of the 2SC4223 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
02K0103L5104M02
D1098HA (KT)/4208MO, TS No.2762–1/4
sgnitaR
nimpytxam
*01*04
8
tinU
2SC4223
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
V
T
V
bo
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
I
no
C
I
gts
C
I
f
C
I,V01=
EC BC
I,A1= I,A1= I,A1=
A1.0=
C
zHM1=f,V01=
I,A57.0=
A51.0=
B
I,A57.0=
A51.0=5.1V
B
I,Am1=
0=0011V
E
R,Am5=
= 008V
EB
I,Am1=
0=7V
C
I,A57.0=
I–=
1B
2B
I,A2.0=
1B 1B 1B
2B
I,A2.0=
2B
I,A2.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
51zHM 53Fp
depmalc,Hm5=L,A51.0=008V
R,A4.0–=
004= V,
L
R,A4.0–=
004= V,
L
R,A4.0–=
004= V,
L
V004=
CC
V004=
CC
V004=
CC
tinU
0.2V
5.0sµ
0.3sµ
3.0sµ
No.2762–2/4
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