Sanyo 2SC4204 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-hFE, AF Amplifier Applications
Ordering number:EN2531A
2SC4204
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Applications
· AF amplifier, various drivers.
Features
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Large current capacity (IC=0.7A).
· Low collector-to-emitter saturation voltage
(V
· High V
Specifications
Absolute Maximum Ratings at Ta = 25˚C
≤0.5V).
CE(sat)
(V
EBO
tnerruCrotcelloCI
≥15V).
EBO
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003B
[2SC4204]
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
JEDEC : T O-92
EIAJ : SC-43
OBC
OEC
OBE
03V
52V
51V
7.0A
5.1A
6.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I
)tas(EC
C
I
)tas(EB
C
I,V02=
BC
BE
EC
BC
0=1.0Aµ
E
I,V01=
0=1.0Aµ
C
Am05=
C
Am005=
C
I,V01=
Am05=
C
zHM1=f,V01=
I,Am005=
Am01=
B
I,Am005=
Am01=9.02.1V
B
D1598HA (KT)/4231, 4217TA, TS No.2531–1/4
sgnitaR
nimpytxam
00800510023
006
072zHM
9Fp
51.005.0V
tinU
2SC4204
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
no
gts
f
I,Aµ01=
C
C
E
0=03V
E
R,Am1=
=∞ 52V
EB
I,Aµ01=
0=51V
C
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
Switching Time Test Circuit
sgnitaR
nimpytxam
1.0sµ
6.0sµ
60.0sµ
tinU
No.2531–2/4
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