Ordering number:EN2479A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1607/2SC4168
High-Speed Switching Applications
Features
· Fast switching speed.
· High gain-bandwidth product.
· Low saturation voltage.
( ) : 2SA1607
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2018A
[2SA1607/2SC4168]
C : Collector
B : Base
E : Emitter
SANYO : CP
OBC
OEC
OBE
04)–(V
02)–(V
5)–(V
051)–(Am
003)–(Am
03)–(Am
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
V
OBC
OBE
EF
T
BC
V
BE
V
EC
V
EC
I,V03)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V1)–(=
C
Am01)–(=
I,V01)–(=
C
Am01)–(=
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
nimpytxam
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/7129MO/4077TA, TS No.2479-1/5
sgnitaR
*06*072
)081(
007zHM
)004(zHM
Continued on next page.
tinU
2SA1607/2SC4168
Continued from preceding page.
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ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatoVnwodkaerBesaB-ot-rettimEV
emiTyaleDt
emiTesiRt
emiTegarotSt
emiTllaFt
V
bo
d
r
gts
f
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
zHM1=f,V01)–(=
I,Am01)–(=
Am1)–(=
B
I,Am01)–(=
Am1)–(=
B
I,Aµ01)–(=
0=04)–(V
E
R,Am1)–(=
=∞ 02)–(V
EB
I,Aµ01)–(=
0=5)–(V
C
tiucriCtseTdeificepseeS11)41(02sn
tiucriCtseTdeificepseeS01)11(02sn
tiucriCtseTdeificepseeS07)08(081sn
tiucriCtseTdeificepseeS51)61(52sn
sgnitaR
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)9.2(Fp
6.2Fp
80.02.0)–(V
)70.0–(V
27.00.1)–(V
)57.0–(V
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* : The 2SA1607/2SC4168 are classified by 10mA hFE as follows :
2SA1607
2SC4168
021306081409
0213060814090725531
Marking 2SA1607 : YL
2SC4168 : GT
hFE rank 2SA1607 : 3, 4
2SC4168 : 3, 4, 5
Switching Time T est Circuit
5IB1=–5IB2=IC=50mA
(For PNP, the polarity is reserved.)
Unit (reisistance : Ω, capacitance : F)
No.2479-2/5