Sanyo 2SC4160 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
400V/4A Switching Regulator Applications
Ordering number:ENN2481C
2SC4160
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· High breakdown voltage.
· High reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Specifications
Package Dimensions
unit:mm
2041A
[2SC4160]
10.0
3.2
18.1
5.6
2.55
2.55
1
3.5
1.6
1.2
0.75
23
2.55
2.55
4.5
2.8
7.2
16.0
2.4
0.7
14.0
1 : Base
2.4
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PW≤300µs, duty cycle≤10%
PC
B
C
Tc=25˚C
005V
004V
7V
4A
8A
5.1A
2W
52W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
hEF*1VECI,V5=
niaGtnerruCCD
hEF2VECI,V5=
hEF3VECI,V5=
V
OBC
V
OBE
I,V004=
BC
BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A4.0=
C
A2=
C
Am01=
C
nimpytxam
* : The hFE1 of the 2SC4160 is classified as follows. Continued on next page.
When specifying the hFE1 rank, specify two or more ranks in principle.
knaRLMN
h
EF
03ot5104ot0205ot03
sgnitaR
5105
01
01
tinU
O2500TS (KOTO)/D0198HA (KT)/3267TA, TS No.2481–1/4
2SC4160
Continued from preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
B1
I
PW=20µs
DC≤1%
INPUT
50Ω
B2
R
B
V
R
100µF 470µF
++
V
T
V
bo
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
I
C
no
V
I
C
gts
V
I
C
f
V
R
L
EC
BC
CC
CC
CC
OUTPUT
I,V01=
A4.0=02zHM
C
zHM1=f,V01=05Fp
I,A2=
A4.0=8.0V
B
I,A2=
A4.0=5.1V
B
I,Am1=
0=005V
E
R,Am5=
=∞ 004V
EB
I,Am1=
0=7V
C
I,A2=
I,A3=
I,A3=
I,A3=
I,A2.0=
1B
1B
V002=
1B
V002=
1B
V002=
2B
I,A6.0=
2B
I,A6.0=
2B
I,A6.0=
2B
sgnitaR
nimpytxam
depmalc,Hm1=L,A8.0–=004V
R,A2.1–=
6.66= Ω,
L
R,A2.1–=
6.66= Ω,
L
R,A2.1–=
6.66= Ω,
L
tinU
5.0sµ
5.2sµ
3.0sµ
VBE=-5V VCC=200V
5
IC-
450mA
4
500mA
–A
C
3
2
Collector Current, I
1
0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector-to-Emitter Voltage, VCE–V
100
VCE=5V
7
5
Ta=120
h
°C
400mA
FE
V
CE
4
VCE=5V
IC-
VBE(on)
350mA
300mA
250mA
200mA
150mA
100mA
50mA
=
I
B
0
3
–A
C
2
1
Collector Current, I
0
°C
Ta=120
°C
°C
25
40
-
Base-to-Emitter Voltage, VBE(on) – V
-
-
I
C
1.0
I
/
IB=5
C
7
V
CE(sat)
I
C
–V
5
FE
°C
3
2
25
°C
40
-
CE(sat)
3
2
°C
Ta=120
°C
°C
25
40
-
DC Current Gain, h
10
7
5
57
0.1
Collector-to-Emitter
Saturation Voltage, V
7
0.1
357 57232
1.0 10
5
57
23 2357 57
0.1 1.0 10
Collector Current, IC– A Collector Current, IC–A
No.2481–2/4
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