Sanyo 2SC4135 Specifications
Ordering number:EN2511A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1593/2SC4135
High-Voltage Switching Applications
Applications
· Power supplies, relay derivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1593/
2SC4135-applied sets to be made more compact.
Package Dimensions
unit:mm
2045B
[2SA1593/2SC4135]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1593/2SC4135]
( ) : 2SA1593
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
* : The 2SA1593/2SC4135 are classified by 100mA hFE as follows :
002R001082S041004T002
OBC
OEC
OBE
C
PC
C
Tc=25˚C
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72098HA (KT)/8219MO/4097TA, TS No.2511-1/4
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
021)–(V
001)–(V
6)–(V
2)–(A
3)–(A
1W
51W
˚C
˚C
2SA1593/2SC4135
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time T est Circuit
V
OBC
OBE
EF
T
bo
no
gts
f
BC
V
BE
V
EC
V
EC
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V001)–(=
0=001)–(An
E
I,V4)–(=
0=001)–(An
C
I,V5)–(=
C
I,V01)–(=
C
I,A1)–(=
B
I,A1)–(=
B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am001)–(=*001*004
Am001)–(=021zHM
zHM1=f,V01)–(=
Am001)–(=
Am001)–(=58.0)–(2.1)–(V
0=021)–(V
=∞ 001)–(V
EB
0=6)–(V
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)52(Fp
61Fp
)22.0–()6.0–(V
31.04.0V
)08(sn
08sn
)057(sn
0001sn
)04(sn
05sn
tinU
No.2511-2/4
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