Sanyo 2SC4119 Specifications

Ordering number:EN2548B
NPN Triple Diffused Planar Silicon Darlington Transistor
2SC4119
800V/15A Driver Applications
Applications
· Induction cookers.
· High-voltage , high-power switching.
Features
· High speed (adoption of MBIT process).
· High breakdown voltage (V
CBO
=1500V).
· On-chip damper diode.
· High reliability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egaltoVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC OEC OBE
Tc=25˚C
Package Dimensions
unit:mm
2048A
[2SC4119]
E : Emitter C : Collector B : Base
SANYO : TO-3PBL
0051V 008V 5V 51A 03A 3A
5.3W 052W
˚C ˚C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D251MH/O268MO/4207TA, TS No.2548-1/4
2SC4119
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
egatloVniatsuSrotcelloCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVdrawroFedoiDV
emiTllaFt
Switching Time Test Circuit
V
OBC
V
OBE
V
EF
I
)sus(OEC
C
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
F f
CE
I
C
I,V008=
BC BE EC
0=1.0Am
E
I,V5=
0=006Am
C
I,V5=
A51=52
C
I,Am001=
0=008V
B
I,A51=
A57.0=0.3V
B
I,A51=
A57.0=5.2V
B I,Am5=
0=0051V
E
A51= 0.2V
I,A51=
I,A1=
1B
2B
sgnitaR
nimpytxam
V,A5–=
R,V002=
CC
3.31= 0.2sµ
L
tinU
Unit (resistance : V , capacitance : F)
No.2548-2/4
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