Ordering number:EN2548B
NPN Triple Diffused Planar Silicon Darlington Transistor
2SC4119
800V/15A Driver Applications
Applications
· Induction cookers.
· High-voltage , high-power switching.
Features
· High speed (adoption of MBIT process).
· High breakdown voltage (V
CBO
=1500V).
· On-chip damper diode.
· High reliability.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egaltoVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC
OEC
OBE
Tc=25˚C
Package Dimensions
unit:mm
2048A
[2SC4119]
E : Emitter
C : Collector
B : Base
SANYO : TO-3PBL
0051V
008V
5V
51A
03A
3A
5.3W
052W
˚C
˚C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/D251MH/O268MO/4207TA, TS No.2548-1/4
2SC4119
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
egatloVniatsuSrotcelloCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVdrawroFedoiDV
emiTllaFt
Switching Time Test Circuit
V
OBC
V
OBE
V
EF
I
)sus(OEC
C
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
F
f
CE
I
C
I,V008=
BC
BE
EC
0=1.0Am
E
I,V5=
0=006Am
C
I,V5=
A51=52
C
I,Am001=
0=008V
B
I,A51=
A57.0=0.3V
B
I,A51=
A57.0=5.2V
B
I,Am5=
0=0051V
E
A51= 0.2V
I,A51=
I,A1=
1B
2B
sgnitaR
nimpytxam
V,A5–=
R,V002=
CC
3.31= Ω 0.2sµ
L
tinU
Unit (resistance : V , capacitance : F)
No.2548-2/4