Sanyo 2SC4110 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

NPN Triple Diffused Planar Silicon Transistor

400V/25A Switching Regulator Applications

Ordering number:EN2475B

2SC4110

15.6

2.6

3.5

1.2

14.0

1.6

1.0

2.0

0.6

20.0 20.0

15.0

1.3

3.2

4.8

2.0

1.4

0.6

5.45

5.45

1.4

1

2

3

Features

· High breakdown voltage and high reliability.

· Fast switching speed.

· Wide ASO.

· Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

egatloVrettimE-ot-rotcelloCV

egatloVesaB-ot-rettimEV

tnerruCrotcelloCI

)esluP(tnerruCrotcelloCI

tnerruCesaBI

noitapissiDrotcelloCP

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

C

PC

B

C

OBC
OEC
OBE

PW≤300µs, duty cycle≤10%

Tc=25˚C

Package Dimensions

unit:mm

2022A

[2SC4110]

1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB

005V
004V
7V
52A
04A
8A

5.2W
061W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

tnerruCffotuCrotcelloCI

tnerruCffotuCrettimEI

hEF1VECI,V5=

niaGtnerruCCD

hEF2VECI,V5=
hEF3VECI,V5=

* : The hFE1 of the 2SC4110 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.

03L5104M0205N03

V

OBC

V

OBE

I,V004=

BC
BE

0=01Aµ

E

I,V5=

0=01Aµ

C

A2.3=

C

A61=

C

Am01=

C

D1598HA (KT)/9288MO/5257TA, TS No.2475–1/4

sgnitaR

nimpytxam

*51*05
01
01

tinU

2SC4110

retemaraPlobmySsnoitidnoC

egatloVnoitarutaSrettimE-ot-rotcelloCV

egatloVnoitarutaSrettimE-ot-esaBV

tcudorPhtdiwdnaB-niaGf

ecnaticapaCtuptuOC

egatloVnwodkaerBesaB-ot-rotcelloCV

egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV

emiTNO-nruTt

emiTegarotSt

emiTllaFt

I

I,A61=

)tas(EC

C

I

)tas(EB

C

V

T

bo

no
gts

f

EC

V

BC

I

OBC)RB(

C

I

OEC)RB(

C

I

OBE)RB(

E

I

)sus(XEC

C

I

C

I

C

I

C

A2.3=

B

I,A61=

A2.3=5.1V

B

I,V01=

A2.3=

C

zHM1=f,V01=

I,Am1=

0=005V

E

R,Am01=

=∞ 004V

EB

I,Am1=

0=7V

C

I,A01=

I,A1=

1B

I,A02=
I,A02=
I,A02=

2B

I,A4=

1B

2B

I,A4=

1B

2B

I,A4=

1B

2B

Switching Time Test Circuit

sgnitaR

nimpytxam

02zHM
003Fp

depmalc,Hµ002=L,A4–=004V

R,A8–=

01= Ω V,

L

R,A8–=

01= Ω V,

L

R,A8–=

01= Ω V,

L

V002=

CC

V002=

CC

V002=

CC

tinU

8.0V

5.0sµ

5.2sµ

3.0sµ

No.2475–2/4