SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
400V/4A Switching Regulator Applications
Ordering number:EN2470A
2SC4105
Features
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC
OEC
OBE
PW≤300µs, duty cycle≤10%
Tc=25˚C
Package Dimensions
unit:mm
2010C
[2SC4105]
3.6
5.6
2.55
5.1
123
2.7
6.3
15.1
1.2
14.0
0.8
2.7
2.55
4.5
1.3
1 : Base
0.4
2 : Collector
3 : Emitter
JEDEC : T O-220AB
EIAJ : SC-46
005V
004V
7V
4A
8A
5.1A
57.1W
04W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
hEF1VECI,V5=
niaGtnerruCCD
hEF2VECI,V5=
hEF3VECI,V5=
V
OBC
V
OBE
I,V004=
BC
BE
0=01Aµ
E
I,V5=
0=01Aµ
C
A4.0=
C
A2=
C
Am01=
C
* : The hFE1 of the 2SC4105 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
03L5104M0205N03
sgnitaR
nimpytxam
*51*05
01
01
tinU
D1598HA (KT)/5257TA, TS No.2470–1/4
2SC4105
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A2=
)tas(EC
C
I
)tas(EB
C
V
T
bo
no
gts
f
EC
V
BC
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
I
C
V
CC
I
C
V
CC
I
C
V
CC
A4.0=
B
I,A2=
A4.0=5.1V
B
I,V01=
A4.0=
C
zHM1=f,V01=
I,Am1=
0=005V
E
R,Am5=
=∞ 004V
EB
I,Am1=
0=7V
C
I,A2=
I,A3=
I,A3=
I,A3=
I,A2.0=
1B
1B
V002=
1B
V002=
1B
V002=
2B
I,A6.0=
2B
I,A6.0=
2B
I,A6.0=
2B
Switching Time Test Circuit
sgnitaR
nimpytxam
02zHM
05Fp
depmalc,Hm1=L,A8.0–=004V
R,A2.1–=
6.66= Ω,
L
R,A2.1–=
6.66= Ω,
L
R,A2.1–=
6.66= Ω,
L
tinU
8.0V
5.0sµ
5.2sµ
3.0sµ
No.2470–2/4