Ordering number:ENN2262B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1552/2SC4027
High-Voltage Switching Applications
Applications
· Converters, inverters, color TV audio output.
Features
·Adoption of FBET, MBIT processes.
·High voltage and large current capacity.
·Fast switching time.
·Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact.
Package Dimensions
unit:mm |
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2045B |
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[2SA1552/2SC4027] |
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6.5 |
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1.5 |
2.3 |
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5.0 |
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0.5 |
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4 |
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5.5 |
7.0 |
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0.85 |
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0.7 |
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1.2 |
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0.8 |
1.6 |
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7.5 |
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0.6 |
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0.5 |
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1 |
2 |
3 |
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1 : Base |
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2 : Collector |
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3 : Emitter |
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2.3 |
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2.3 |
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4 : Collector |
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SANYO : TP |
unit:mm |
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2044B |
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[2SA1552/2SC4027] |
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6.5 |
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2.3 |
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5.0 |
1.5 |
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0.5 |
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4 |
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5.5 |
7.0 |
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0.85 |
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2.5 |
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0.5 |
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1.2 |
1 |
2 |
0.8 |
3 |
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0.6 |
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1.2 |
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1 : Base |
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0 to 0.2 |
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2 : Collector |
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3 : Emitter |
2.3 |
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2.3 |
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4 : Collector |
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SANYO : TP-FA |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53002RM (KT)/72098HA (KT)/8109MO/5137TA, TS No.2262-1/5
2SA1552/2SC4027
( ) : 2SA1552
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Collector-to-Base Voltage |
VCBO |
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(–)180 |
V |
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Collector-to-Emitter Voltage |
VCEO |
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(–)160 |
V |
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Emitter-to-Base Voltage |
VEBO |
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(–)6 |
V |
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Collector Current |
IC |
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(–)1.5 |
A |
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Collector Current (Pulse) |
ICP |
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(–)2.5 |
A |
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Collector Dissipation |
PC |
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1 |
W |
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Tc=25˚C |
15 |
W |
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Junction Temperature |
Tj |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
VCB=(–)120V, IE=0 |
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(–)1.0 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)4V, IC=0 |
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(–)1.0 |
µA |
DC Current Gain |
hFE1 |
VCE=(–)5V, IC=(–)100mA |
100 |
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400 |
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hFE2 |
VCE=(–)5V, IC=(–)10mA |
80 |
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Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)50mA |
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120 |
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MHz |
Output Capacitance |
Cob |
VCB=–(–)10V, f=1MHz |
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12 |
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pF |
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(22) |
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pF |
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Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)500mA, IB=(–)50mA |
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(–0.2) |
(–0.5) |
V |
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0.13 |
0.45 |
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Base-to-Emitter Saturation Voltatage |
VBE(sat) |
IC=(–)500mA, IB=(–)50mA |
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(–)0.85 |
(–)1.2 |
V |
Collector-to-Base Breakdown Volage |
V(BR)CBO |
IC=(–)10A, IE=0 |
(–)180 |
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V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=1mA, RBE=∞ |
(–)160 |
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V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=10µA, IC=0 |
(–)6 |
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V |
Turn-ON Time |
ton |
See specified Test Circuit. |
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60 |
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µs |
Storage Time |
tstg |
See specified Test Circuit. |
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(0.7) |
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µs |
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1.2 |
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Fall Time |
tf |
See specified Test Circuit. |
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(50) |
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µs |
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80 |
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* : The 2SA1552/2SC4027 are classified by 100mA hFE as follows :
Rank |
R |
S |
T |
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hFE |
100 to 200 |
140 to 280 |
200 to 400 |
Switching Time Test Circuit
PW=20µs INPUT D.C.≤ 1%
50Ω 
IB1 |
RB |
OUTPUT |
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VR |
IB2 |
RL |
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14kΩ |
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+ |
+ |
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100µF 470µF |
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--5V |
100V |
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10IB1= --10IB2= IC=0.7A
For PNP, the polarity is reversed.
No.2262-2/5
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