SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Ordering number:EN2960
2SC4002
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003B
[2SC4002]
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
JEDEC : T O-92
EIAJ : SC-43
OBC
OEC
OBE
004V
004V
5V
002Am
004Am
006Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
* : The 2SC4002 is classified by 50mA hFE as follows :
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
C
)tas(EB
I,V003=
BC
BE
EC
EC
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V01=
Am05=
C
I,V03=
Am01=
C
I,Am05=
Am5=
B
I,Am05=
Am5=
B
021D06002E001
sgnitaR
nimpytxam
*06*002
07zHM
tinU
6.0V
0.1V
D1598HA (KT)/6139MO, TS No.2960–1/3
2SC4002
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
emiTNO-nruTt
emiTFFO-nruTt
Switching Time Test Circuit
I
egatloVnwodkaerBrettimE-ot-rotcelloCV
OBC)RB(
I
OEC)RB(
I
OBE)RB(
V
bo
V
er
no
ffo
I,Aµ01=
C
C
E
BC
BC
0=004V
E
R,Am1=
=∞ 004V
EB
I,Aµ01=
0=5V
C
zHM1=f,V03=
zHM1=f,V03=
.tiucrictsetdeificepseeS
.tiucrictsetdeificepseeS
sgnitaR
nimpytxam
4Fp
3Fp
52.0sµ
0.5sµ
tinU
No.2960–2/3