Sanyo 2SC4002 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Ordering number:EN2960
2SC4002
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· High breakdown voltage.
· Adoption of MBIT process.
· Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
C
Package Dimensions
unit:mm
2003B
[2SC4002]
1 : Emitter 2 : Collector 3 : Base SANYO : NP JEDEC : T O-92 EIAJ : SC-43
OBC OEC OBE
004V 004V 5V 002Am 004Am 006Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
* : The 2SC4002 is classified by 50mA hFE as follows :
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
C
)tas(EB
I,V003=
BC BE EC EC
0=1.0Aµ
E
I,V4=
0=1.0Aµ
C
I,V01=
Am05=
C
I,V03=
Am01=
C
I,Am05=
Am5=
B
I,Am05=
Am5=
B
021D06002E001
sgnitaR
nimpytxam
*06*002
07zHM
tinU
6.0V
0.1V
D1598HA (KT)/6139MO, TS No.2960–1/3
2SC4002
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
emiTNO-nruTt
emiTFFO-nruTt
Switching Time Test Circuit
I
egatloVnwodkaerBrettimE-ot-rotcelloCV
OBC)RB(
I
OEC)RB(
I
OBE)RB(
V
bo
V
er no
ffo
I,Aµ01=
C C E
BC BC
0=004V
E
R,Am1=
= 004V
EB
I,Aµ01=
0=5V
C
zHM1=f,V03= zHM1=f,V03=
.tiucrictsetdeificepseeS .tiucrictsetdeificepseeS
sgnitaR
nimpytxam
4Fp 3Fp
52.0sµ
0.5sµ
tinU
No.2960–2/3
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