Sanyo 2SC3998 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Ordering number:EN2732

2SC3998

D2598HA (KT)/N158MO, TS No.2732–1/3

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2048B

[2SC3998]

Features

· High speed (t

f

=100ns typ).

· High breakdown voltage (V

CBO

=1500V).

· High reliability (adoption of HVP process).

· Adoption of MBIT process.

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PBL

Tc=25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC

0051V

egatloVrettimE-ot-rotcelloCV

OEC

008V

egatloVesaB-ot-rettimEV

OBE

6V

tnerruCrotcelloCI

C

52A

)esluP(tnerruCrotcelloCI

PC

05A

noitapissiDrotcelloCP

C

052W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

retemaraPlobmySsnoitidnoC

sgnitaR

tinU

nimpytxam

tnerruCffotuCrotcelloC

I

SEC

V

EC

V0051= 0.1Am

egatloVniatsaSrettimE-ot-rotcelloCV

)sus(OEC

I

C

I,Am001=

B

0=008V

tnerruCffotuCrettimEI

OBE

V

BE

I,V4=

C

0=0.1Am

tnerruCffotuCrotcelloCI

OBC

V

BC

I,V008=

E

0=01Aµ

niaGtnerruCCD

h

EF

1V

EC

I,V5=

C

A0.1=

803

h

EF

2V

EC

I,V5=

C

A02=

48

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC

I

C

I,A02=

B

A5=

5V

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB

I

C

I,A02=

B

A5=5.1V

emiTegarotSt

gts

I

C

I,A21=

1B

I,A4.2=

2B

A8.4–=

0.3sµ

emiTllaFt

f

I

C

I,A21=

1B

I,A4.2=

2B

A8.4–=

2.0sµ

20.0

1.2

2.0

3.4

3.3

0.6

5.0

1.0

2.0

20.7

26.0

12

3

5.455.45

2.8

2SC3998

No.2732–2/3

Switching Time Test Circuit