Sanyo 2SC3998 Specifications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN2732
2SC3998
20.0
26.0
Features
· High speed (tf=100ns typ).
· High breakdown voltage (V
CBO
=1500V).
· High reliability (adoption of HVP process).
Package Dimensions
unit:mm
2048B
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
tnerruCffotuCrotcelloCI
niaGtnerruCCD
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
emiTegarotSt
emiTllaFt
OBC
OEC
OBE
C
PC
Tc=25˚C
C
I
hEF1VECI,V5=
hEF2VECI,V5=
V
SEC
OBE
OBC
gts
f
EC
I
)sus(OEC
C
V
BE
V
BC
I
)tas(EC
C
I
)tas(EB
C
I
C
I
C
V0051= 0.1Am
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,V008=
0=01Aµ
E
A0.1=
C
A02=
C
I,A02=
A5=
B
I,A02=
A5=5.1V
B
I,A21=
I,A21=
I,A4.2=
1B
1B
2B
I,A4.2=
2B
[2SC3998]
3.3
1.0
2.0
3.4
20.7
12
A8.4–=
A8.4–=
2.0
1.2
3
2.8
5.455.45
5.0
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
0051V
008V
6V
52A
05A
052W
˚C
˚C
sgnitaR
nimpytxam
803
48
tinU
5V
0.3sµ
2.0sµ
D2598HA (KT)/N158MO, TS No.2732–1/3
Switching Time Test Circuit
2SC3998
No.2732–2/3
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