Sanyo 2SC3995 Specifications

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:EN2508B
2SC3995
Features
· High speed (tf=100ns typ).
· High reliability (adoption of HVP process).
· High breakdown voltage (V
CBO
=1500V).
Package Dimensions
unit:mm
2048B
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
egatloVniatsaSrettimE-ot-rotcelloCV
tnerruCffotuCrettimEI
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
niaGtnerruCCD
emiTegarotSt
emiTllaFt
OBC OEC OBE
C
PC
Tc=25˚C
C
I I
hEF1VECI,V5= hEF2VECI,V5=
V
OBC SEC
OBE
gts
f
BC
V
EC
I
)sus(OEC
C
V
BE
I
)tas(EC
C
I
)tas(EB
C
I
C
I
C
I,V008=
0=01Aµ
E
R,V0051=
0=0.1Am
EB
I,Am001=
0=008V
B
I,V4=
0=0.1Am
C
I,A01=
A5.2=
B
I,A01=
A5.2=5.1V
B
A0.1=
C
A01=
C
I,A8= I,A8=
I,A6.1=
1B 2B
2B
I,A6.1=
2B
[2SC3995]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
0051V 008V 6V 21A 03A 081W
˚C ˚C
sgnitaR
nimpytxam
803
48 A2.3–= A2.3–=
tinU
5V
0.3sµ
2.0sµ
N3098HA (KT)/62695TS (KOTO)/5257TA, TS No.2508–1/3
Switching Time Test Circuit
2SC3995
No.2508–2/3
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