Ordering number:EN2236D
NPN Triple Diffused Planar Silicon Transistor
2SC3993
800V/16A Switching Regulator Applications
Features
·High breakdown voltage, high reliability.
·Fast switching speed.
·Wide ASO.
·Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2048B
[2SC3993]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
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|
|
|
Collector-to-Base Voltage |
VCBO |
|
1100 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
800 |
V |
Emitter-to-Base Voltage |
VEBO |
|
7 |
V |
Collector Current |
IC |
|
16 |
A |
Collector Current (Pulse) |
ICP |
PW≤300 s, Duty cycle≤10% |
40 |
A |
Base Current |
IB |
|
8 |
A |
Collector Dissipation |
PC |
Tc=25˚C |
250 |
W |
Junction Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
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|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Collector Cutoff Current |
ICBO |
|
VCB=800V, IE=0 |
|
|
|
|
|
10 |
µA |
||||
Emitter Cutoff Current |
IEBO |
|
VEB=5V, IC=0 |
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|
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|
|
|
|
10 |
µA |
||
DC Current Gain |
hFE1 |
|
VCE=5V, IC=1.2A |
|
|
10* |
|
40* |
|
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hFE2 |
|
VCE=5V, IC=6A |
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|
8 |
|
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Gain-Bandwidth Product |
fT |
|
VCE=10V, IC=1.2A |
|
|
|
|
15 |
|
MHz |
||||
Output Capacitance |
Cob |
|
VCB=10V, f=1MHz |
|
|
|
|
320 |
|
pF |
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* : The 2SC3993 are classified by 1.2A hFE as follows : |
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10 K 20 |
|
15 L 30 |
|
20 |
M 40 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/91096TS (KOTO) 8-0266/224TA, TS No.2236–1/4
2SC3993
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=6A, IB=1.2A |
|
|
2.0 |
V |
Base-to-Emitter Saturation Voltage |
VBE(sat) |
IC=6A, IB=1.2A |
|
|
1.5 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=1mA, IE=0 |
1100 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=10mA, RBE=∞ |
800 |
|
|
V |
Emitter-to-Base Breakdown Voltage |
V(BR)EBO |
IE=1mA, IC=0 |
7 |
|
|
V |
Collector-to-Emitter Sustain Voltage |
VCEX(sus) |
IC=8A, IB1=–IB2=–1.6A, L=500µH, clamped |
800 |
|
|
V |
Turn-ON Time |
ton |
VCC=400V, 5IB1=–2.5IB2=IC=10A, RL=40Ω |
|
|
0.5 |
µs |
Storage Time |
tstg |
VCC=400V, 5IB1=–2.5IB2=IC=10A, RL=40Ω |
|
|
3.0 |
µs |
Fall Time |
tf |
VCC=400V, 5IB1=–2.5IB2=IC=10A, RL=40Ω |
|
|
0.3 |
µs |
Switching Time Test Circuit
No.2236–2/4
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