SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
500V/35A Switching Regulator Applications
Ordering number:EN2234C
2SC3990
Features
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
OBC
OEC
OBE
PW≤300µs, duty cycle≤10%
Tc=25˚C
Package Dimensions
unit:mm
2048B
[2SC3990]
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
008V
005V
7V
53A
05A
21A
052W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SC3990 is classified by 3.2A hFE as follows :
hEF1VECI,V5=
hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I,V005=
BC
BE
EC
BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A2.3=
C
A61=
C
I,V01=
A2.3=
C
zHM1=f,V01=
03L5104M0205N03
N3098HA (KT)/90495MO/2247TA, TS 8-0265 No.2234–1/4
nimpytxam
8
sgnitaR
*51*05
81zHM
004Fp
tinU
2SC3990
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A61=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
V
no
gts
f
CC
V
CC
V
CC
A2.3=
B
I,A61=
A2.3=
B
I,Am1=
0=008V
E
R,Am01=
=∞ 005V
EB
I,Am1=
0=7V
C
I,A51=
I–=
1B
2B
I5,V002=
I5.2–=
1B
I5,V002=
I5,V002=
2BI=C
I5.2–=
1B
2BI=C
I5.2–=
1B
2BI=C
Switching Time Test Circuit
sgnitaR
nimpytxam
depmalc,Hµ002=L,A2–=005V
R,A81=
1.11= Ω
L
R,A81=
1.11= Ω
L
R,A81=
1.11= Ω
L
tinU
0.1V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.2234–2/4