SANYO 2SC3988 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
NPN Triple Diffused Planar Silicon Transistor
500V/25A Switching Regulator Applications
Ordering number:EN2232B
2SC3988
Features
· High breakdown voltage, high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
C
PC
B
C
Package Dimensions
unit:mm
2022A
OBC OEC OBE
Pulse PW300µs, duty cycle10%
Tc=25˚C
[2SC3988]
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB
008V 005V 7V 52A 04A 8A 051W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOC
* : The 2SC3988 is classified by 2.4A hFE as follows :
hEF1VECI,V5= hEF2VECI,V5=
V
OBC
V
OBE
V
T
V
bo
I,V005=
BC BE
EC BC
0=01Aµ
E
I,V5=
0=01Aµ
C
A4.2=
C
A21=
C
I,V01=
A4.2=
C
zHM1=f,V01=
03L5104M0205N03
N3098HA (KT)/O2196TS (KOTO) 8-0267/3197AT, TS No.2232–1/4
nimpytxam
8
sgnitaR
*51*05
81zHM 062Fp
tinU
2SC3988
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV egatloVnwodkaerBesaB-ot-rettimEV egatloVniatsuSrettimE-ot-rotcelloCV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
I,A21=
)tas(EC
C
I
C
)tas(EB
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I
)sus(XEC
C
V
no gts
f
CC
V
CC
V
CC
A4.2=
B
I,A21=
A4.2=
B I,Am1=
0=008V
E
R,Am5=
= 005V
EB
I,Am1=
0=7V
C
I,A01=
I–=
1B
2B
I5,V002=
I5.2–=
1B
I5,V002= I5,V002=
2BI=C
I5.2–=
1B
2BI=C
I5.2–=
1B
2BI=C
Switching Time Test Circuit
sgnitaR
nimpytxam
depmalc,Hµ002=L,A2–=005V
R,A41=
3.41=
L
R,A41=
3.41=
L
R,A41=
3.41=
L
tinU
0.1V
5.1V
5.0sµ
0.3sµ
3.0sµ
No.2232–2/4
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