SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Planar Silicon Darlington Transistor
Driver Applications
Ordering number:EN2221B
2SC3987
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Large current capacity and wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage
due to the adoption of an accurate impurity diffusion
process.
· High inductive load handling capability.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
* : With Zener diode (60±10V)
Package Dimensions
unit:mm
2041A
[2SC3987]
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
B
C
Tc=25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
*05V
*05V
6V
3A
6A
6.0A
0.2W
02W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
h
V
OBC
V
OBE
V
EF
V
T
I
)tas(EC
C
I
)tas(EB
C
I,V04=
BC
BE
EC
EC
0=01Aµ
E
I,V5=
0=2Am
C
I,V5=
A5.1=
C
I,V5=
A5.1=
C
I,A5.1=
Am6=
B
I,A5.1=
Am6=0.2V
B
N3098HA (KT)/O2196TS (KOTO) 8-0260 4237KI/N146AT, TS No.2221–1/4
nimpytxam
00010004
sgnitaR
081zHM
0.15.1V
tinU
2SC3987
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
ytilibapaCgnildnaHdaoLevitcudnIb/sER,Hm001=L
emiTNO-nruTt
emiTegarotSt
emiTllaFt
I
OBC)RB(
C
I
OEC)RB(
C
no
V
gts
V
f
V
I,Am1.0=
0=050607V
E
R,Am1=
=∞ 050607V
EB
001= Ω 03Jm
EB
I,V02=
CC
C
I,V02=
CC
C
I,V02=
CC
C
.tiucriCtseTdeificepseeS
I,A5.1=
I–=
1B
I,A5.1=
1B
I,A5.1=
1B
Am6=
2B
.tiucriCtseTdeificepseeS
I–=
Am6=
2B
.tiucriCtseTdeificepseeS
I–=
Am6=
2B
Switching Time T est Circuit Es/b Test Circuit
sgnitaR
nimpytxam
2.0sµ
0.3sµ
7.0sµ
tinU
No.2221–2/4