Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2439B
2SA1540/2SC3955
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High gain-bandwidth product : fT=300MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent high
frequency characteristics : Cre=1.5pF/NPN, 1.8pF/
PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type : TO-126 plastic package.
( ) : 2SA1540
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
*hFE1 : The 2SA1540/2SC3955 are classified by 10mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2042B
[2SA1540/2SC3955]
8.0
4.0
1.0
1.0
=200Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
hEF1V
hEF2V
T
BC
V
BE
EC
EC
V
EC
I,V051)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V03)–(=
C
Am01)–(=*04*023
Am05)–(=02
Am03)–(=003zHM
23
4.8
1.4
3.0
11.0
7.5
1.5
3.0
15.5
1.7
nimpytxam
3.3
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
002)–(V
002)–(V
3)–(V
001)–(Am
002)–(Am
3.1W
7W
sgnitaR
˚C
˚C
tinU
53002RM (KT)/72098HA (KT)/N228MO/2247TA, TS No.2439-1/4
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
--50
2SA1540
--40
–mA
C
--30
--20
Collector Current, I
--10
0
0 --4 --8 --16--12 --20
Collector-to-Emitter Voltage, VCE–V
--120
--100
2SA1540/2SC3955
V
bo
er
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
C
CE
--500µA
V
I
)tas(EC
I
)tas(EB
--450µA
BC
BC
C
C
--400µA
µA
--350
µA
--300
µA
--250
µA
--200
--150µA
--100µA
--50µA
IB=0
ITR03939
I
-- V
C
BE
2SA1540
VCE=--10V
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am02)–(=
Am2)–(=0.1)–(V
B
I,Am02)–(=
Am2)–(=0.1)–(V
B
50
2SC3955
40
–mA
C
30
20
Collector Current, I
10
0
0
120
100
sgnitaR
nimpytxam
9.1Fp
)4.2(Fp
5.1Fp
)8.1(Fp
I
-- V
C
500
µA
CE
450
µA
400µA
350µA
µA
300
µA
250
200µA
150µA
100µA
50µA
IB=0
48 1612 20
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
ITR03940
2SC3955
VCE=10V
tinU
–mA
Collector Current, I
DC Current Gain, h
FE
--80
C
--60
--40
--20
0
3
2
100
7
5
3
2
10
7
5
0 --1.2--1.0--0.8--0.6--0.4--0.2
--1.0
Base-to-Emitter Voltage, VBE–V
hFE -- I
C
2SA1540
VCE=--10V
23557
Collector Current, IC–mA
72 235
--10
7
--100
ITR03941
ITR03943
–mA
80
C
60
40
Collector Current, I
20
100
FE
DC Current Gain, h
10
0
0 1.21.00.80.60.40.2
3
2
7
5
3
2
7
5
1.0
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 557
Collector Current, IC–mA
C
72 235
10
ITR03942
2SC3955
VCE=10V
7
100
ITR03944
No.2439-2/4
Page 3
1000
– MHz
T
2SA1540/2SC3955
f
-- I
T
C
7
5
3
2SA1540
VCE=--30V
1000
– MHz
T
7
5
3
f
-- I
T
C
2SC3955
VCE=30V
2
100
7
5
Gain-Bandwidth Product, f
3
--1.0
2
3257
Collector Current, IC–mA
--10
Cob -- V
CB
3257
--100
ITR03945
2SA1540
f=1MHz
10
7
5
3
2
1.0
Output Capacitance, Cob – pF
7
5
2
23 57 23 5757
--1.0 --10
Collector-to-Base Voltage, VCB-- V
Cre -- V
CB
--100
ITR03947
2SA1540
f=1MHz
10
7
5
2
100
7
5
Gain-Bandwidth Product, f
3
1.0
2
3257
Collector Current, IC–mA
10
Cob -- V
CB
3257
100
ITR03946
2SC3955
f=1MHz
10
7
5
3
2
1.0
Output Capacitance, Cob – pF
7
5
2
23 57 23 5757
1.0 10
Collector-to-Base Voltage, VCB-- V
Cre -- V
CB
100
ITR03948
2SC3955
f=1MHz
10
7
5
3
2
1.0
7
Reverse Transfer Capacitance, Cre – pF
5
--1.0 --10
2
--1.0
7
(sat) – V
5
CE
3
2
--0.1
Collector-to-Emitter
Saturation Voltage, V
7
5
--1.0
23 57 23 5757
Collector-to-Base Voltage, VCB-- V
VCE(sat) -- I
23 57
Collector Current, IC–mA
C
23 5757
--10 --100
ITR03949
2SA1540
IC / IB=10
ITR03951
--100
3
2
1.0
7
Reverse Transfer Capacitance, Cre – pF
5
1.0 10
Collector-to-Base Voltage, VCB-- V
2
1.0
7
(sat) – V
5
CE
3
2
0.1
Collector-to-Emitter
Saturation Voltage, V
7
5
1.0
2 3 57 2 3 5757
VCE(sat) -- I
23 57
Collector Current, IC–mA
C
23 5757
10 100
100
ITR03950
2SC3955
IC / IB=10
ITR03952
No.2439-3/4
Page 4
2SA1540/2SC3955
3
ICP=200mA
2
IC=100mA
100
–mA
7
C
5
3
2
Collector Current, I
10
7
For PNP, minus sign is omitted.
5
537 2 525337
10 100
Collector-to-Emitter Voltage, VCE–V
A S O
DC operation
Tc=25
°C
2SA1540 / 2SC3955
10ms
1ms
ITR03953
10
8
–W
C
6
4
2
Collector Dissipation, P
1.3
0
PC -- Ta
2SA1540 / 2SC3955
No heat sink
Ambient Temperature, Ta – ˚C
100 140120 1602006040 80
ITR03954
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2002. Specifications and information herein are subject to
change without notice.
PS No.2439-4/4
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