Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2438B
2SA1539/2SC3954
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=500MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent HF
response : Cre=2.7pF/NPN, 4.0pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type : TO-126 plastic package.
( ) : 2SA1539
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* hFE1 : The 2SA1539/2SC3954 are classified by 50mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2042B
[2SA1539/SC3954]
8.0
4.0
1.0
1.0
=120Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
hEF1V
hEF2V
T
BC
V
BE
EC
EC
V
EC
I,V08)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=1.0)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V01)–(=
C
Am05)–(=*04*023
Am002)–(=02
Am05)–(=004zHM
23
4.8
1.4
3.0
11.0
7.5
1.5
3.0
15.5
1.7
nimpytxam
3.3
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
021)–(V
021)–(V
3)–(V
003)–(Am
006)–(Am
3.1W
8W
sgnitaR
˚C
˚C
tinU
53002RM (KT)/72098HA (KT)/7138MO/2037KI, TS No.2438-1/4
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
--200
--160
C
CE
–mA
C
--120
--1.4mA
--1.2mA
--8 0
--1.0mA
--0.8mA
Collector Current, I
--4 0
--0.6mA
--0.2mA
0
0 --4 --8 --16--1 2 --20
Collector-to-Emitter Voltage, VCE–V
I
-- V
--350
--300
C
BE
2SA1539/2SC3954
V
bo
er
2SA1539
--2.0mA
--1.8mA
--1.6mA
--0.4mA
IB=0
2SA1539
VCE=--10V
V
I
)tas(EC
I
)tas(EB
ITR03923
BC
BC
C
C
sgnitaR
nimpytxam
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am05)–(=
Am5)–(=0.1)–(V
B
I,Am05)–(=
Am5)–(=0.1)–(V
B
I
-- V
200
C
2SC3954
CE
2.0mA
160
–mA
C
120
1.3Fp
)4.4(Fp
7.2Fp
)0.4(Fp
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
80
0.8mA
0.6mA
Collector Current, I
40
0.4mA
0.2mA
0
0
48 1612 20
IB=0
Collector-to-Emitter Voltage, VCE–V
I
-- V
350
300
C
BE
2SC3954
VCE=10V
tinU
ITR03924
–mA
C
Collector Current, I
DC Current Gain, h
--250
--200
--150
--100
--5 0
100
FE
10
0
0 --1.2--1 .0--0.8--0.6--0.4--0.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 5357
--1 0
Collector Current, IC–mA
C
7235
--100
ITR03925
2SA1539
VCE=--10V
ITR03927
–mA
C
Collector Current, I
FE
DC Current Gain, h
250
200
150
100
50
0
3
2
100
7
5
3
2
10
7
5
01.21.00.80.60.40.2
Base-to-Emitter Voltage, VBE–V
10
hFE -- I
23 5357
C
7235
100
Collector Current, IC–mA
ITR03926
2SC3954
VCE=10V
ITR03928
No.2438-2/4
Page 3
1000
– MHz
T
2SA1539/2SC3954
f
-- I
T
C
2SA1539
7
5
VCE=--10V
1000
– MHz
7
5
T
3
3
f
-- I
T
C
2SC3954
VCE=10V
100
Gain-Bandwidth Product, f
Output Capacitance, Cob – pF
2
7
5
5
3
2
10
7
5
3
2
1.0
5
3
2
57
--10
Collector Current, IC–mA
23 5757 2 3
--1.0 --10
Collector-to-Base Voltage, VCB-- V
3232557
Cob -- V
Cre -- V
CB
CB
--100
ITR03929
2SA1539
f=1MHz
57
ITR03931
2SA1539
f=1MHz
--100
Gain-Bandwidth Product, f
Output Capacitance, Cob – pF
100
10
1.0
2
7
5
57
10
Collector Current, IC–mA
5
3
2
7
5
3
2
1.0 10
Collector-to-Base Voltage, VCB-- V
5
3
2
3232557
Cob -- V
23 5757 23
Cre -- V
100
CB
CB
ITR03930
2SC3954
f=1MHz
57
ITR03932
2SC3954
f=1MHz
100
10
7
5
3
2
Reverse Transfer Capacitance, Cre – pF
1.0
--10
(sat) – V
--1.0
CE
--0.1
Collector-to-Emitter
Saturation Voltage, V
--1.0 --10
7
5
3
2
7
5
3
2
7
5
3
23 5757 2 3
Collector-to-Base Voltage, VCB-- V
VCE(sat) -- I
23 57357 2 53
--10
Collector Current, IC–mA
C
--100
57
ITR03933
2SA1539
IC / IB=10
ITR03935
--100
10
7
5
3
2
Reverse Transfer Capacitance, Cre – pF
1.0
10
(sat) – V
1.0
CE
0.1
Collector-to-Emitter
Saturation Voltage, V
1.0 10
Collector-to-Base Voltage, VCB-- V
7
5
3
2
7
5
3
2
7
5
3
23 5757 2 3
VCE(sat) -- I
23 57357 2 53
10
Collector Current, IC–mA
C
100
57
ITR03934
2SC3954
IC / IB=10
ITR03936
No.2438-3/4
100
Page 4
2SA1539/2SC3954
1000
ICP=600mA
7
5
IC=300mA
3
–mA
2
C
100
7
5
3
Collector Current, I
2
For PNP, minus sign is omitted.
10
537 2 2537
10 100
Collector-to-Emitter Voltage, VCE–V
A S O
10ms
DC operation
Tc=25
2SA1539 / 2SC3954
1ms
°C
ITR03937
10
8
–W
C
6
4
2
Collector Dissipation, P
1.3
0
PC -- Ta
2SA1539 / 2SC3954
No heat sink
Ambient Temperature, Ta – ˚C
100 140120 1602006040 80
ITR03938
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2002. Specifications and information herein are subject to
change without notice.
PS No.2438-4/4
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