Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2436C
2SA1537/2SC3952
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High-definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=700MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent
high-frequency characteristic :
Cre=3.1pF/NPN, 4.8pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type.
( ) : 2SA1537
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
* hFE1 : The 2SA1537/2SC3952 are classified by 50mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2042B
[2SA1537/2SC3952]
8.0
4.0
1.0
1.0
=70Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
hEF1V
hEF2V
T
BC
V
BE
EC
EC
V
EC
I,V06)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V01)–(=
C
Am05)–(=*04*023
Am003)–(=06
Am001)–(=007zHM
23
4.8
1.4
3.0
11.0
7.5
1.5
3.0
15.5
1.7
3.3
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
sgnitaR
nimpytxam
08)–(V
07)–(V
3)–(V
005)–(Am
0001)–(Am
3.1W
01W
˚C
˚C
tinU
53002RM (KT)/72098HA (KT)/O189MO/2247TA, TS No.2436-1/4
Page 2
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
--200
2SA1537
--160
–mA
C
--120
--8 0
Collector Current, I
--4 0
0
0 --4 --8 --16--1 2 --20
Collector-to-Emitter Voltage, VCE–V
--600
--500
2SA1537/2SC3952
V
bo
er
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
C
CE
BC
V
BC
I
)tas(EC
C
I
)tas(EB
C
--1.8mA
--1.6mA
--1.4mA
--1.2mA
--1.0mA
--0.8mA
--0.6mA
--0.4mA
--0.2mA
IB=0
ITR03891
I
-- V
C
BE
2SA1537
VCE=--10V
zHM1=f,V03)–(=
zHM1=f,V03)–(=
I,Am07)–(=
Am7)–(=0.1)–(V
B
I,Am07)–(=
Am7)–(=0.1)–(V
B
200
2SC3952
160
–mA
C
120
80
Collector Current, I
40
0
0
600
500
sgnitaR
nimpytxam
6.3Fp
)4.5(Fp
1.3Fp
)8.4(Fp
I
-- V
C
CE
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
IB=0
48 1612 20
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
ITR03892
2SC3952
VCE=10V
tinU
–mA
C
Collector Current, I
--400
--300
--200
--100
FE
DC Current Gain, h
0
0 --1.4--1 .2--1 .0--0 .8--0 .6--0 .4--0 .2
3
2
100
7
5
3
2
10
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 557
--1 0
Collector Current, IC–mA
C
72357
--100
ITR03893
2SA1537
VCE=--10V
ITR03895
--1000
–mA
C
Collector Current, I
FE
DC Current Gain, h
400
300
200
100
100
0
01.41.21.00.80.60.40.2
3
2
7
5
3
2
10
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 557
10
Collector Current, IC–mA
C
72357
100
ITR03894
2SC3952
VCE=10V
1000
ITR03896
No.2436-2/4
Page 3
1000
– MHz
T
2SA1537/2SC3952
f
-- I
T
2
C
2SA1537
2
VCE=--10V
1000
– MHz
7
5
7
T
5
f
-- I
T
C
2SC3952
VCE=10V
3
2
100
Gain-Bandwidth Product, f
7
5
57 32753257
--10
Collector Current, IC–mA
5
3
2
10
7
5
3
2
Output Capacitance, Cob – pF
1.0
7
5
5
3
2
23 5757 2 3
--1.0 --10
Collector-to-Base Voltage, VCB-- V
Cob -- V
Cre -- V
--100 --1000
ITR03897
CB
2SA1537
f=1MHz
57
--100
ITR03899
CB
2SA1537
f=1MHz
3
2
100
Gain-Bandwidth Product, f
7
5
57 3257
10
Collector Current, IC–mA
5
3
2
10
7
5
3
2
Output Capacitance, Cob – pF
1.0
7
5
1.0 10
Collector-to-Base Voltage, VCB-- V
5
3
2
Cob -- V
23 5757 2 3
Cre -- V
100
CB
CB
3257
1000
ITR03898
2SC3952
f=1MHz
57
100
ITR03900
2SC3952
f=1MHz
10
7
5
3
2
1.0
Reverse Transfer Capacitance, Cre – pF
7
5
--10
7
5
3
2
(sat) – V
--1.0
CE
7
5
3
2
--0.1
7
Collector-to-Emitter
Saturation Voltage, V
5
3
57 2 3 57 2 3 5
23 5757 2 3
--1.0 --10
Collector-to-Base Voltage, VCB-- V
VCE(sat) -- I
--10
Collector Current, IC–mA
C
--100
57
ITR03901
2SA1537
IC / IB=10
ITR03903
--100
10
7
5
3
2
1.0
Reverse Transfer Capacitance, Cre – pF
7
5
1.0 10
Collector-to-Base Voltage, VCB-- V
10
7
5
3
2
(sat) – V
1.0
CE
7
5
3
2
0.1
7
Collector-to-Emitter
Saturation Voltage, V
5
3
57 2 3 57
10
Collector Current, IC–mA
23 5757 2 3
VCE(sat) -- I
C
2SC3952
IC / IB=10
23 57
100
57
100
ITR03902
1000
ITR03904
No.2436-3/4
Page 4
2SA1537/2SC3952
2
ICP=1000mA
1000
7
IC=500mA
5
–mA
3
C
2
100
7
5
3
Collector Current, I
2
For PNP, minus sign is omitted.
10
537 2 537
Collector-to-Emitter Voltage, VCE–V
A S O
2SA1537 / 2SC3952
10ms
1ms
DC operation
Tc=25°C
10 100
ITR03905
12
10
–W
8
C
6
4
2
Collector Dissipation, P
1.3
0
PC -- Ta
2SA1537 / 2SC3952
No heat sink
100 140120 1602006040 80
Ambient Temperature, Ta – ˚C
ITR03906
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2002. Specifications and information herein are subject to
change without notice.
PS No.2436-4/4
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