Sanyo 2SC3951 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2435B
2SA1536/2SC3951
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High definition CRT display video output, wide-band
amplifier.
Features
· High fT : fT=600MHz.
· High breakdown voltage : V
· Small reverse transfer capacitance and excellent high
-frequency characteristic :
Cre=1.9pF/NPN, 2.4pF/PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type.
( ) : 2SA1536
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
*hFE1 : The 2SA1536/2SC3951 are classified by 50mA hFE as follows : Continued on next page.
Package Dimensions
unit:mm
2042B
[2SA1536/2SC3951]
8.0
4.0
1.0
1.0
=70Vmin.
CEO
1.6
0.8
0.8
0.75
1
2.4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
tnerruCrotcelloCkaePI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
knaRCDEF
h
EF
08ot04021ot06002ot001023ot061
OBC
OEC
OBE
C
PC
C
Tc=25˚C
V
OBC
OBE
hEF1V
hEF2V
T
BC
V
BE
EC
EC
V
EC
I,V06)–(=
0=1.0)–(Aµ
E
I,V2)–(=
0=0.1)–(Aµ
C
I,V01)–(=
C
I,V01)–(=
C
I,V01)–(=
C
Am05)–(=*04*023
Am002)–(=02
Am001)–(=006zHM
23
4.8
1.4
3.0
7.5
1.5
3.0
1.7
11.0
15.5
nimpytxam
3.3
0.7
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
08)–(V
07)–(V
3)–(V
003)–(Am
006)–(Am
3.1W
8W
sgnitaR
˚C
˚C
tinU
53002RM (KT)/72098HA (KT)/9149MO/2247TA, TS No.2435-1/4
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtuptuOC
ecnaticapaCrefsnarTesreveRC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSesaB-ot-rettimEV
I
-- V
C
--200
--160
CE
–mA
C
--120
--8 0
Collector Current, I
--4 0
0
0 --4 --8 --16--1 2 --20
Collector-to-Emitter Voltage, VCE–V
I
-- V
--350
--300
C
BE
2SA1536/2SC3951
V
bo
er
--1.8mA
--1.6mA
--1.4mA
--1.2mA
--1.0mA
--0.8mA
--0.6mA
--0.4mA
--0.2mA
IB=0
2SA1536
VCE=--10V
V
I
)tas(EC
C
I
)tas(EB
C
2SA1536
ITR03875
BC
BC
I,Am05)–(=
B
I,Am05)–(=
B
sgnitaR
nimpytxam
zHM1=f,V03)–(=
zHM1=f,V03)–(=
Am5)–(=0.1)–(V
Am5)–(=0.1)–(V
I
-- V
200
160
C
2SC3951
1.8mA
CE
2.0mA
4.2Fp
)1.3(Fp
9.1Fp
)4.2(Fp
1.6mA
tinU
1.4mA
–mA
C
120
1.2mA
1.0mA
80
0.8mA
0.6mA
Collector Current, I
40
0.4mA
0.2mA
IB=0
ITR03876
2SC3951
VCE=10V
350
300
0
0
48 1612 20
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
–mA
C
Collector Current, I
--250
--200
--150
--100
--5 0
100
FE
DC Current Gain, h
0
0 --1.2--1 .0--0.8--0.6--0.4--0.2
3
2
7
5
3
2
10
7
5
Base-to-Emitter Voltage, VBE–V
--1 0
hFE -- I
23 557
C
72357
--100
Collector Current, IC–mA
ITR03877
2SA1536
VCE=--10V
ITR03879
--1000
–mA
C
Collector Current, I
FE
DC Current Gain, h
250
200
150
100
50
100
10
0
01.21.00.80.60.40.2
3
2
7
5
3
2
7
5
Base-to-Emitter Voltage, VBE–V
hFE -- I
23 557
10
C
72357
100
Collector Current, IC–mA
ITR03878
2SC3951
VCE=10V
1000
ITR03880
No.2435-2/4
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