SANYO 2SC3923, 2SA1529 Datasheet

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SANYO 2SC3923, 2SA1529 Datasheet

Ordering number:EN2153A

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1529/2SC3923

Switching Applications (with Bias Resistance)

Applications

Package Dimensions

· Switching circuits, inverter circuits, interface circuits,

unit:mm

driver circuits.

2003A

Features

[2SA1529/2SC3923]

 

· On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ.

 

· Large current capacity : I=500mA.

 

C

 

 

 

 

 

JEDEC : TO-92

B : Base

 

 

 

 

 

EIAJ : SC-43

C : Collector

 

( ) : 2SA1529

 

 

 

SANYO : NP

E : Emitter

 

Specifications

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Absolute Maximum Ratings at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

Collector-to-Base Voltage

VCBO

 

 

 

 

 

 

 

(–)50

V

Collector-to-Emitter Voltage

VCEO

 

 

 

 

 

 

 

(–)50

V

Emitter-to-Base Voltage

VEBO

 

 

 

 

 

 

 

(–)6

V

Collector Current

IC

 

 

 

 

 

 

 

(–)500

mA

Collector Current (Pulse)

ICP

 

 

 

 

 

 

 

(–)800

mA

Collector Dissipation

PC

 

 

 

 

 

 

 

600

mW

Junction Temperature

Tj

 

 

 

 

 

 

 

150

˚C

 

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

 

 

 

 

 

–55 to +150

˚C

 

 

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta = 25˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

 

Conditions

 

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB=(–)40V, IE=0

 

 

 

 

 

(–)0.1

µA

 

ICEO

VCE=(–)40V, IB=0

 

 

 

 

 

(–)0.5

µA

Emitter Cutoff Current

IEBO

VEB=(–)5V, IC=0

 

(–)860

(–)

 

(–)

µA

 

 

 

 

 

 

 

1140

 

1670

 

DC Current Gain

hFE

VCE=(–)5V, IC=(–)50mA

 

50

 

 

 

 

Gain-Bandwidth Product

fT

VCE=(–)10V, IC=(–)5mA

 

 

 

250

 

 

MHz

 

 

 

 

 

 

 

(200)

 

 

MHz

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

VCB=(–)10V, f=1MHz

 

 

 

3.7

 

 

pF

 

 

 

 

 

 

 

(5.5)

 

 

pF

 

 

 

 

 

 

 

 

 

 

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=(–)50mA, IB=(–)2.5mA

 

 

 

(–)0.1

 

(–)0.3

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=(–)10µA, IE=0

 

(–)50

 

 

 

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=(–)100µA, RBE=∞

 

(–)50

 

 

 

V

Input OFF-State Voltage

VI(off)

VCE=(–)5V, IC=(–)100µA

 

(–)0.8

(–)1.1

 

(–)1.5

V

Input ON-State Voltage

VI(on)

VCE=(–)0.2V, IC=(–)50mA

 

(–)1.0

(–)1.9

 

(–)4.0

V

Input Resistance

R1

 

 

 

1.5

2.2

 

2.9

 

 

 

 

 

 

 

 

 

 

Resistance Ratio

R1/R2

 

 

 

0.9

1.0

 

1.1

 

 

 

 

 

 

 

 

 

 

 

 

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/3307KI/9046AT, TS No.2153-1/2

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