Ordering number:EN2152A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1528/2SC3922
Switching Applications (with Bias Resistance)
Applications |
Package Dimensions |
|
· Switching circuits, inverter circuits, interface circuits, |
unit:mm |
|
dirver circuits. |
2003A |
|
Features |
[2SA1528/2SC3922] |
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· On-chip bias resistance : R1=2.2KΩ, R2=10kΩ. |
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· Large current capacity : I=500mA. |
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C |
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JEDEC : TO-92 |
B : Base |
|
EIAJ : SC-43 |
C : Collector |
( ) : 2SA1528 |
SANYO : NP |
E : Emitter |
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Collector-to-Base Voltage |
VCBO |
|
(–)50 |
V |
Collector-to-Emitter Voltage |
VCEO |
|
(–)50 |
V |
Emitter-to-Base Voltage |
VEBO |
|
(–)6 |
V |
Collector Current |
IC |
|
(–)500 |
mA |
Collector Current (Pulse) |
ICP |
|
(–)800 |
mA |
Collector Dissipation |
PC |
|
600 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
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|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
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|
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
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||||
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|
|
min |
typ |
max |
|
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Collector Cutoff Current |
ICBO |
VCB=(–)40V, IE=0 |
|
|
(–)0.1 |
µA |
|
ICEO |
VCE=(–)40V, IB=0 |
|
|
(–)0.5 |
µA |
Emitter Cutoff Current |
IEBO |
VEB=(–)5V, IC=0 |
(–)315 |
(–)410 |
(–)590 |
µA |
DC Current Gain |
hFE |
VCE=(–)5V, IC=(–)10mA |
50 |
|
|
|
Gain-Bandwidth Product |
fT |
VCE=(–)10V, IC=(–)5mA |
|
250 |
|
MHz |
|
|
|
|
(200) |
|
MHz |
|
|
|
|
|
|
|
Output Capacitance |
Cob |
VCB=(–)10V, f=1MHz |
|
3.7 |
|
pF |
|
|
|
|
(5.5) |
|
pF |
|
|
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|
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|
Collector-to-Emitter Saturation Voltage |
VCE(sat) |
IC=(–)50mA, IB=(–)2.5mA |
|
(–)0.1 |
(–)0.3 |
V |
Collector-to-Base Breakdown Voltage |
V(BR)CBO |
IC=(–)10µA, IE=0 |
(–)50 |
|
|
V |
Collector-to-Emitter Breakdown Voltage |
V(BR)CEO |
IC=(–)100µA, RBE=∞ |
(–)50 |
|
|
V |
Input OFF-State Voltage |
VI(off) |
VCE=(–)5V, IC=(–)100µA |
(–)0.5 |
(–)0.67 |
(–)0.9 |
V |
Input ON-State Voltage |
VI(on) |
VCE=(–)0.2V, IC=(–)50mA |
(–)0.7 |
(–)1.6 |
(–)3.0 |
V |
Input Resistance |
R1 |
|
1.5 |
2.2 |
2.9 |
kΩ |
|
|
|
|
|
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|
Resistance Ratio |
R1/R2 |
|
0.198 |
0..22 |
0.242 |
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3307KI/8206AT, TS No.2152-1/2
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