Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Switching Applications (with Bias Resistance)
Ordering number:ENN2161B
2SA1520/2SC3914
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Switching circuits, inverter circuits, interface circuits,
driver circuits.
Features
· On-chip bias resistance : R1=2.2kΩ, R2=10kΩ.
· Small-sized package : CP.
· Large current capacity : IC=500mA.
( ) : 2SA1520
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2018B
[2SA1520/2SC3914]
0.4
3
0.95
0.95
1
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
1.1
0 to 0.1
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
05)–(V
05)–(V
6)–(V
005)–(Am
008)–(Am
002Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloC
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
I
I
V
OBC
OEC
OBE
EF
T
BC
V
EC
V
BE
V
EC
V
EC
I,V04)–(=
0=1.0)–(Aµ
E
I,V04)–(=
0=5.0)–(Aµ
B
I,V5)–(=
0=513)–(014)–(095)–(Aµ
C
I,V5)–(=
C
Am01)–(=05
I,V01)–(=
Am5)–(=
C
53002RM (KT)/71598HA (KT)/3317KI/D086TA, TS No.2161-1/3
sgnitaR
nimpytxam
052zHM
)002(zHM
Continued on next page.
tinU
Continued from preceding page.
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ecnaticapaCtuptuOC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVetatS-FFOtupnIV
egatloVetatS-NOtupnIV
ecnatsiseRtupnI1R5.12.29.2kΩ
oitaRecnatsiseR2R/1R891.022.0242.0
Marking 2SA1520 : NL, 2SC3914 : VY
Electrical Connection
2SA1520/2SC3914
V
bo
egatloVnwodkaerBrettimE-ot-rotcelloCV
BC
I
)tas(EC
C
I
OBC)RB(
C
I
OEC)RB(
C
V
)ffo(I
EC
V
)no(I
EC
zHM1=f,V01)–(=
I,Am05)–(=
B
I,Aµ01)–(=
E
R,Aµ001)–(=
I,V5)–(=
C
I,V2.0)–(=
Am5.2)–(=1.0)–(3.0)–(V
0=05)–(V
=∞ 05)–(V
EB
Aµ001)–(=5.0)–(76.0)–(9.0)–(V
C
Am05)–(=7.0)–(6.1)–(0.3)–(V
sgnitaR
nimpytxam
7.3Fp
)5.5(Fp
tinU
FE
100
DC Current Gain, h
Base
(INPUT)
5
VCE=5V
3
R1=2.2kΩ
R2=10kΩ
2
7
5
3
2
Collector
(OUTPUT)
R1
R2
2SA1520 : PNP 2SC3914 : NPN
Emitter
(GND)
h
FE
Base
(INPUT)
-- I
C
R1
R2
Collector
(OUTPUT)
Emitter
(GND)
2SA1520 /2SC3914
–V
I(on)
10
5
VCE=0.2V
3
R1=2.2kΩ
R2=10kΩ
2
7
5
3
2
VI(on) -- I
C
2SA1520 /2SC3914
10
7
5
72357
1.0 10
2
VCE=5V
R1=2.2kΩ
1000
R2=10kΩ
7
5
– µA
3
C
2
100
7
5
3
Collector Current, I
2
10
7
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Collector Current, IC–mA
Input OFF-State Voltage, V
(For PNP, minus sign is omitted.)
23 57 23
I
-- VI(off)
C
100
2SA1520 /2SC3914
(For PNP, minus sign is omitted.)
–V
I(off)
ITR03845
ITR03847
1.0
Input ON-State Voltage, V
7
5
5
72357
1.0 10
Collector Current, IC–mA
(For PNP, minus sign is omitted.)
23 57 23
100
ITR03846
5
No.2161-2/3