SANYO 2SC3912, 2SA1518 Datasheet

Ordering number:EN2159A

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1518/2SC3912

Switching Applications (With Bias Resistance)

Application

· Switching circuits, inverters circuits, inferface

circuits, driver circuits.

Features

· On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Small-sized package : CP.

· Large current capacity : I=500mA.

C

( ) : 2SA1518

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2018A

[2SA1518/2SC3912]

C : Collector

B : Base

E : Emitter

SANYO : CP

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	VCBO		(–)50	V
Collector-to-Emitter Voltage	VCEO		(–)50	V
Emitter-to-Base Voltage	VEBO		(–)10	V
Collector Current	IC		(–)500	mA
Peak Collector Current	ICP		(–)800	mA
Collector Dissipation	PC		200	mW
Junction Temperature	Tj		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Collector Cutoff Current	ICBO	VCB=(–)40V, IE=0			(–)0.1	µA
	ICEO	VCE=(–)40V, IB=0			(–)0.5	µA
Emitter Cutoff Current	IEBO	VEB=(–)5V, IC=0	(–)195	(–)250	(–)360	µA
DC Current Gain	hFE	VCE=(–)5V, IC=(–)10mA	50*
Gain-Bandwidth Product	fT	VCE=(–)10V, IC=(–)5mA		250		MHz
				(200)		MHz
Output Capacitance	Cob	VCB=(–)10V, f=1MHz		3.7		pF
				(5.5)		pF
Collector-to-Emitter Saturation Voltage	VCE(sat)	IC=(–)20mA, IB=(–)1mA		(–)0.1	(–)0.3	V
Collector-to-Base Breakdown Voltage	V(BR)CBO	IC=(–)10µA, IE=0	(–)50			V
Collector-to-Emitter Breakdown Voltage	V(BR)CEO	IC=(–)100µA, RBE=∞	(–)50			V
Input OFF-State Voltage	VI(off)	VCE=(–)5V, IC=(–)100µA	(–)0.8	(–)1.1	(–)1.5	V
Input ON-State Voltage	VI(on)	VCE=(–)0.2V, IC=(–)10mA	(–)1.0	(–)2.0	(–)4.0	V
Input Resistance	R1		7	10	13	kΩ
Resistance Ratio	R1/R2		0.9	1.0	1.1

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/3307KI/8196AT, TS No.2159-1/2